MS652S datasheet, PDF - EEWORLD Datasheet

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MS652S: DescriptionRF & MICROWAVE TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size300KB，4 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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MS652S Overview

RF & MICROWAVE TRANSISTORS

MS652S Parametric

Parameter Name	Attribute value
Maker	ADPOW
package instruction	DISK BUTTON, O-PRDB-F4
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-based maximum capacity	15 pF
Collector-emitter maximum voltage	16 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-PRDB-F4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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MS652/MS652S

RF & MICROWAVE TRANSISTORS

ESCRIPTION

KEY FEATURES

The MS652/MS652S is a 12.5 V Class C epitaxial silicon NPN planar

transistor designed primarily for UHF communications. It withstands severe

mismatch under normal operating conditions.

512 MHz

12.5 Volts

Common Emitter

OUT

= 5 W Min.

= 10.0 dB Gain

APPLICATIONS/BENEFITS

MS652

MS652S

UHF Portable/Mobile

Applications

ABSOLUTE MAXIMUM RATINGS (T

CASE

= 25°

Symbol

CBO

CEO

EBO

DISS

STG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

Power Dissipation

Junction Temperature

Storage Temperature

Value

4.0

+200

-65 to +150

Unit

°C

THERMAL DATA

TH(j-c)

Junction-Case Thermal Resistance

°C/W

MS652.PDF 12-04-03

Page 1

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at

WWW.ADVANCEDPOWER.COM

or contact our factory direct.

MS652S Related Products

	MS652S	MS652
Description	RF & MICROWAVE TRANSISTORS	RF & MICROWAVE TRANSISTORS
Maker	ADPOW	ADPOW
package instruction	DISK BUTTON, O-PRDB-F4	POST/STUD MOUNT, O-PRPM-F4
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	2 A	2 A
Collector-based maximum capacity	15 pF	15 pF
Collector-emitter maximum voltage	16 V	16 V
Configuration	SINGLE	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-PRDB-F4	O-PRPM-F4
Number of components	1	1
Number of terminals	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	DISK BUTTON	POST/STUD MOUNT
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	FLAT	FLAT
Terminal location	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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