AT28BV64B-20PC datasheet, PDF - EEWORLD Datasheet

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AT28BV64B-20PC: DescriptionEEPROM 200NS IND TEMP PKG- 200NS COM TEMP; Categorystorage storage; File Size387KB，17 Pages; ManufacturerAtmel (Microchip)

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AT28BV64B-20PC Overview

EEPROM 200NS IND TEMP PKG- 200NS COM TEMP

AT28BV64B-20PC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Atmel (Microchip)
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	200 ns
Other features	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS
command user interface	NO
Data polling	YES
Data retention time - minimum	10
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	37.0205 mm
memory density	65536 bit
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
page size	64 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	4.826 mm
Maximum standby current	0.00002 A
Maximum slew rate	0.015 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
switch bit	YES
width	15.24 mm
Maximum write cycle time (tWC)	10 ms

AT28BV64B-20PC Related Products

	AT28BV64B-20PC	AT28BV64B-25SC	AT28BV64B-20SI	AT28BV64B-20TI	AT28BV64B-20SC	AT28BV64B-25JC
Description	EEPROM 200NS IND TEMP PKG- 200NS COM TEMP	EEPROM 200NS IND TEMP PKG- 250NS COM TEMP	EEPROM 200NS IND TEMP PKG- 200NS IND TEMP	EEPROM 200NS IND TEMP PKG- 200NS IND TEMP	EEPROM 200NS IND TEMP PKG- 200NS COM TEMP	EEPROM 200NS IND TEMP PKG- 250NS COM TEMP
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	SOIC	SOIC	TSOP1	SOIC	QFJ
package instruction	DIP, DIP28,.6	SOP, SOP28,.4	SOP, SOP28,.4	TSOP1, TSSOP28,.53,22	SOP, SOP28,.4	QCCJ, LDCC32,.5X.6
Contacts	28	28	28	28	28	32
Reach Compliance Code	compliant	unknown	unknown	compliant	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	200 ns	250 ns	200 ns	200 ns	200 ns	250 ns
Other features	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS
command user interface	NO	NO	NO	NO	NO	NO
Data polling	YES	YES	YES	YES	YES	YES
Data retention time - minimum	10	10	10	10	10	10
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-PDIP-T28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PQCC-J32
JESD-609 code	e0	e0	e0	e0	e0	e0
length	37.0205 mm	17.9 mm	17.9 mm	11.8 mm	17.9 mm	13.97 mm
memory density	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8	8
Humidity sensitivity level	1	2	2	3	2	2
Number of functions	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	32
word count	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	85 °C	70 °C	70 °C
organize	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	SOP	SOP	TSOP1	SOP	QCCJ
Encapsulate equivalent code	DIP28,.6	SOP28,.4	SOP28,.4	TSSOP28,.53,22	SOP28,.4	LDCC32,.5X.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	CHIP CARRIER
page size	64 words	64 words	64 words	64 words	64 words	64 words
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	240	NOT SPECIFIED	240	240	225
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Programming voltage	3 V	3 V	3 V	3 V	3 V	3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.826 mm	2.65 mm	2.65 mm	1.2 mm	2.65 mm	3.556 mm
Maximum standby current	0.00002 A	0.00002 A	0.00005 A	0.00005 A	0.00002 A	0.00002 A
Maximum slew rate	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA	0.015 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
surface mount	NO	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	J BEND
Terminal pitch	2.54 mm	1.27 mm	1.27 mm	0.55 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	QUAD
Maximum time at peak reflow temperature	30	30	NOT SPECIFIED	30	30	30
switch bit	YES	YES	YES	YES	YES	YES
width	15.24 mm	7.5 mm	7.5 mm	8 mm	7.5 mm	11.43 mm
Maximum write cycle time (tWC)	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms
Maker	Atmel (Microchip)	Atmel (Microchip)	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)

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