Variable Capacitance Diode, Very High Frequency to KA Band, 5.8pF C(T), 15V, Gallium Arsenide, Hyperabrupt
Parameter Name | Attribute value |
Maker | Thales Group |
package instruction | O-XEMW-F2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Minimum breakdown voltage | 15 V |
Configuration | SINGLE |
Diode Capacitance Tolerance | 20% |
Nominal diode capacitance | 5.8 pF |
Diode component materials | GALLIUM ARSENIDE |
Diode type | VARIABLE CAPACITANCE DIODE |
frequency band | VERY HIGH FREQUENCY TO KA BAND |
JESD-30 code | O-XEMW-F2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
Package body material | UNSPECIFIED |
Package shape | ROUND |
Package form | MICROWAVE |
Certification status | Not Qualified |
minimum quality factor | 1500 |
Maximum reverse current | 0.1 µA |
Reverse test voltage | 10 V |
surface mount | YES |
Terminal form | FLAT |
Terminal location | END |
Varactor Diode Classification | HYPERABRUPT |
Base Number Matches | 1 |