K6R3024V1D-HI12 datasheet, PDF

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K6R3024V1D-HI12: Description128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating); Categorystorage storage; File Size121KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6R3024V1D-HI12 Overview

128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)

K6R3024V1D-HI12 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	BGA
package instruction	BGA, BGA119,7X17,50
Contacts	119
Reach Compliance Code	compli
ECCN code	3A991.B.2.A
Maximum access time	12 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B119
length	22 mm
memory density	3145728 bi
Memory IC Type	SRAM MODULE
memory width	24
Number of functions	1
Number of terminals	119
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX24
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.015 A
Minimum standby current	3 V
Maximum slew rate	0.13 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	14 mm
Base Number Matches	1

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K6R3024V1D

Document Title

128Kx24 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

for AT&T

CMOS SRAM

Revision History

Rev. No.

Rev. 0.0

Rev. 0.1

Rev. 0.2

Rev. 0.3

History

Design-In Specification

Pin Configurations Modified ( page 2 )

Add Timing Diagram page 6 ~ 8 )

Modified Read Cycle Timing(2)

1) Version change from M to D

2) C

from 20 to 15 pF

3) Icc from 300 to 170mA for 9ns products

from 270 to 150mA for 10ns products

from 240 to 130mA for 12ns products

4) Isb ( TTL ) from 120 to 40 mA for all products

( CMOS ) from 30 to 15 mA for all products

5) Part number change from -9 to -09 for 9ns products

Change write parameter( tDW) from 6ns to 5ns at -10

Final Specification Release

Draft Data

Dec. 05. 2000

Mar. 07. 2001

April. 04.2001

June. 23.2001

Remark

Design-In

Preliminary

Rev. 0.4

Rev. 1.0

Oct. 31. 2001

Dec. 19. 2001

Preliminary

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Revision 1.0

December 2001

K6R3024V1D-HI12 Related Products

	K6R3024V1D-HI12	K6R3024V1D-HI09	K6R3024V1D-HI10	K6R3024V1D-HC12	K6R3024V1D-HC09	K6R3024V1D-HC10	K6R3024V1D
Description	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	-
package instruction	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	-
Contacts	119	119	119	119	119	119	-
Reach Compliance Code	compli	compli	compli	compli	compli	compli	-
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	-
Maximum access time	12 ns	9 ns	10 ns	12 ns	9 ns	10 ns	-
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-
JESD-30 code	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	-
length	22 mm	22 mm	22 mm	22 mm	22 mm	22 mm	-
memory density	3145728 bi	3145728 bi	3145728 bi	3145728 bi	3145728 bi	3145728 bi	-
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	-
memory width	24	24	24	24	24	24	-
Number of functions	1	1	1	1	1	1	-
Number of terminals	119	119	119	119	119	119	-
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	-
character code	128000	128000	128000	128000	128000	128000	-
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-
Maximum operating temperature	85 °C	85 °C	85 °C	70 °C	70 °C	70 °C	-
organize	128KX24	128KX24	128KX24	128KX24	128KX24	128KX24	-
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	BGA	BGA	BGA	BGA	BGA	BGA	-
Encapsulate equivalent code	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	-
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-
Peak Reflow Temperature (Celsius)	240	240	240	240	240	240	-
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
Maximum standby current	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A	-
Minimum standby current	3 V	3.14 V	3 V	3 V	3.14 V	3 V	-
Maximum slew rate	0.13 mA	0.17 mA	0.15 mA	0.13 mA	0.17 mA	0.15 mA	-
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	-
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-
surface mount	YES	YES	YES	YES	YES	YES	-
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	-
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
Maximum time at peak reflow temperature	30	30	30	30	30	30	-
width	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	-
Base Number Matches	1	1	1	-	-	1	-

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