KSC3502
KSC3502
CRT Display, Video Output
• High Voltage : V
CEO
=200V
• Low Reverse Transfer Capacitance: C
re
=1.2pF @ V
CB
=30V
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
200
200
5
100
200
5
1.2
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
C
re
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Test Condition
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 150V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 10mA
I
C
= 20mA, I
B
= 2mA
I
C
= 20mA, I
B
= 2mA
V
CE
= 30V, I
C
= 10mA
V
CB
= 30V, f= 1MHz
V
CB
= 30V, f= 1MHz
150
1.7
1.2
40
Min.
200
200
5
0.1
0.1
320
0.6
1
V
V
MHz
pF
pF
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE
C
40 ~ 80
D
60 ~ 120
E
100 ~ 200
F
160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3502
Typical Characteristics
20
I
B
= 160
µ
A
10
I
B
= 80
µ
A
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
I
B
= 140
µ
A
16
8
I
B
= 120
µ
A
12
I
B
= 70
µ
A
I
B
= 60
µ
A
I
B
= 50
µ
A
I
B
= 40
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
6
8
I
B
= 60
µ
A
I
B
= 40
µ
A
4
I
B
= 30
µ
A
I
B
= 20
µ
A
4
2
I
B
= 20
µ
A
I
B
= 0
0
0
2
4
6
8
10
I
B
= 10
µ
A
I
B
= 0
0
0
20
40
60
80
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
V
CE
= 10V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
1
V
BE
(sat)
10
0.1
V
CE
(sat)
1
0.1
1
10
100
1000
0.01
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
160
100
V
CE
= 10V
140
f = 1MHz
I
C
[mA], COLLECTOR CURRENT
C
ob
[pF], CAPACITANCE
120
10
100
80
60
1
40
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0.1
1
10
100
1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3502
Typical Characteristics
(Continued)
100
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
f=1MHz
V
CE
= 30V
C
re
[pF], CAPACITANCE
10
100
1
10
0.1
0.1
1
10
100
1000
1
0.1
1
10
100
1000
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 7. Reverse Transfer Capacitance
Figure 8. Current Gain Dandwidth Product
1000
8
7
I
C
[mA], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
I
C
MAX. (Pulse)
0
µ
50
6
I
C
MAX.
100
s
5
D
C
(T
DC
c
(T
a
=
25
1ms
10ms
4
=
25
C)
o
o
C
)
T
c
3
10
2
1
T
a
1
1
10
100
1000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T[ C], TEMPERATURE
Figure 9. Safe Operating Area
Figure 10. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3502
Package Demensions
TO-126
±0.10
3.90
8.00
±0.30
3.25
±0.20
14.20MAX
ø3.20
±0.10
11.00
±0.20
(1.00)
0.75
±0.10
1.60
±0.10
0.75
±0.10
±0.30
(0.50)
1.75
±0.20
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
13.06
16.10
±0.20
0.50
–0.05
+0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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