EEWORLDEEWORLDEEWORLD

Part Number

Search

LTC1155CS8

Description
Dual High Side Micropower MOSFET Driver
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size263KB,16 Pages
ManufacturerLinear ( ADI )
Websitehttp://www.analog.com/cn/index.html
Download Datasheet Parametric Compare View All

LTC1155CS8 Overview

Dual High Side Micropower MOSFET Driver

LTC1155CS8 Parametric

Parameter NameAttribute value
Brand NameLinear Technology
Is it Rohs certified?incompatible
MakerLinear ( ADI )
Parts packaging codeSOIC
package instructionSOP, SOP8,.25
Contacts8
Manufacturer packaging codeS8
Reach Compliance Code_compli
ECCN codeEAR99
high side driverYES
Interface integrated circuit typeBUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 codeR-PDSO-G8
JESD-609 codee0
length4.9 mm
Humidity sensitivity level1
Number of functions2
Number of terminals8
Maximum operating temperature70 °C
Minimum operating temperature
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
power supply4.5/18 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Maximum supply voltage18 V
Minimum supply voltage4.5 V
Nominal supply voltage5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
Disconnect time60 µs
connection time1000 µs
width3.9 mm
LTC1155
Dual High Side
Micropower MOSFET Driver
FEATURES
s
s
s
s
s
s
s
s
s
s
DESCRIPTIO
Fully Enhances N-Channel Power MOSFETs
8µA Standby Current
85µA ON Current
Short-Circuit Protection
Wide Power Supply Range: 4.5V to 18V
Controlled Switching ON and OFF Times
No External Charge Pump Components
Replaces P-Channel High Side MOSFETs
Compatible with Standard Logic Families
Available in 8-Pin SO Package
The LTC
®
1155 dual high side gate driver allows using low
cost N-channel FETs for high side switching applications.
An internal charge pump boosts the gate above the posi-
tive rail, fully enhancing an N-channel MOSFET with no
external components. Micropower operation, with 8µA
standby current and 85µA operating current, allows use in
virtually all systems with maximum efficiency.
Included on-chip is overcurrent sensing to provide auto-
matic shutdown in case of short circuits. A time delay can
be added in series with the current sense to prevent false
triggering on high in-rush loads such as capacitors and
incandescent lamps.
The LTC1155 operates off of a 4.5V to 18V supply input
and safely drives the gates of virtually all FETs. The
LTC1155 is well suited for low voltage (battery-powered)
applications, particularly where micropower “sleep” op-
eration is required.
The LTC1155 is available in both 8-pin PDIP and 8-pin SO
packages.
, LTC and LT are registered trademarks of Linear Technology Corporation.
APPLICATI
s
s
s
s
s
s
s
S
Laptop Power Bus Switching
SCSI Termination Power Switching
Cellular Phone Power Management
P-Channel Switch Replacement
Relay and Solenoid Drivers
Low Frequency Half H-Bridge
Motor Speed and Torque Control
TYPICAL APPLICATI
Laptop Computer Power Bus Switch with Short Circuit Protection
V
S
= 4.5V TO 5.5V
R
SEN
0.02Ω
R
DLY
100k
C
DLY
0.1µF
+
10µF
C
DLY
0.1µF
R
DLY
100k
R
SEN
0.02Ω
DS1
*IRLR034
5A
MAX
TTL, CMOS INPUT
POWER BUS
V
S
DS2
*IRLR034
5A
MAX
TTL, CMOS INPUT
VOLTAGE DROP (V)
G1
LTC1155
G2
IN1
GND
IN2
µP
SYSTEM
GND
DISK
DRIVE
DISPLAY
PRINTER,
ETC.
*SURFACE MOUNT
1155 TA01
U
Switch Voltage Drop
0.25
0.20
0.15
0.10
0.05
0.00
0
1
2
OUTPUT CURRENT (A)
3
1155 TA02
UO
UO
1

LTC1155CS8 Related Products

LTC1155CS8 LTC1155M LTC1155MJ8 LTC1155IS8 LTC1155IN8 LTC1155I LTC1155CN8 LTC1155CJ8 LTC1155 LTC1155C
Description Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver
Is it Rohs certified? incompatible - incompatible incompatible incompatible - incompatible incompatible - -
Maker Linear ( ADI ) - Linear ( ADI ) Linear ( ADI ) Linear ( ADI ) - Linear ( ADI ) Linear ( ADI ) - -
Parts packaging code SOIC - DIP SOIC DIP - DIP DIP - -
package instruction SOP, SOP8,.25 - DIP, DIP8,.3 SOP, SOP8,.25 DIP, DIP8,.3 - DIP, DIP8,.3 DIP, DIP8,.3 - -
Contacts 8 - 8 8 8 - 8 8 - -
Reach Compliance Code _compli - unknow _compli _compli - _compli unknow - -
ECCN code EAR99 - EAR99 EAR99 EAR99 - EAR99 EAR99 - -
high side driver YES - YES YES YES - YES YES - -
Interface integrated circuit type BUFFER OR INVERTER BASED MOSFET DRIVER - BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER - BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER - -
JESD-30 code R-PDSO-G8 - R-GDIP-T8 R-PDSO-G8 R-PDIP-T8 - R-PDIP-T8 R-GDIP-T8 - -
JESD-609 code e0 - e0 e0 e0 - e0 e0 - -
Number of functions 2 - 2 2 2 - 2 2 - -
Number of terminals 8 - 8 8 8 - 8 8 - -
Maximum operating temperature 70 °C - 125 °C 85 °C 85 °C - 70 °C 70 °C - -
Package body material PLASTIC/EPOXY - CERAMIC, GLASS-SEALED PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY CERAMIC, GLASS-SEALED - -
encapsulated code SOP - DIP SOP DIP - DIP DIP - -
Encapsulate equivalent code SOP8,.25 - DIP8,.3 SOP8,.25 DIP8,.3 - DIP8,.3 DIP8,.3 - -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - -
Package form SMALL OUTLINE - IN-LINE SMALL OUTLINE IN-LINE - IN-LINE IN-LINE - -
Peak Reflow Temperature (Celsius) 235 - NOT SPECIFIED 235 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - -
power supply 4.5/18 V - 4.5/18 V 4.5/18 V 4.5/18 V - 4.5/18 V 4.5/18 V - -
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified - -
Maximum seat height 1.75 mm - 5.08 mm 1.75 mm 3.937 mm - 3.937 mm 5.08 mm - -
Maximum supply voltage 18 V - 18 V 18 V 18 V - 18 V 18 V - -
Minimum supply voltage 4.5 V - 4.5 V 4.5 V 4.5 V - 4.5 V 4.5 V - -
Nominal supply voltage 5 V - 5 V 5 V 5 V - 5 V 5 V - -
surface mount YES - NO YES NO - NO NO - -
technology CMOS - CMOS CMOS CMOS - CMOS CMOS - -
Temperature level COMMERCIAL - MILITARY INDUSTRIAL INDUSTRIAL - COMMERCIAL COMMERCIAL - -
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
Terminal form GULL WING - THROUGH-HOLE GULL WING THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE - -
Terminal pitch 1.27 mm - 2.54 mm 1.27 mm 2.54 mm - 2.54 mm 2.54 mm - -
Terminal location DUAL - DUAL DUAL DUAL - DUAL DUAL - -
Maximum time at peak reflow temperature 20 - NOT SPECIFIED 20 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - -
Disconnect time 60 µs - 60 µs 60 µs 60 µs - 60 µs 60 µs - -
connection time 1000 µs - 1000 µs 2000 µs 2000 µs - 1000 µs 1000 µs - -
width 3.9 mm - 7.62 mm 3.9 mm 7.62 mm - 7.62 mm 7.62 mm - -

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号