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DTV32F-E3

Description
Rectifier Diode, 1 Element, 10A, 1500V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size171KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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DTV32F-E3 Overview

Rectifier Diode, 1 Element, 10A, 1500V V(RRM),

DTV32F-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.35 V
Maximum non-repetitive peak forward current130 A
Number of components1
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage1500 V
Maximum reverse recovery time0.175 µs
surface mountNO
Base Number Matches1
VISHAY
DTV32 & DTV32F
Vishay Semiconductors
High Voltage Damper Diodes
TO-220AC
ITO-220AC
Major Ratings and Characteristics
I
F(AV
)
V
RRM
t
rr
t
fr
V
F
10 A
1500 V
175 ns
280 ns
1.35 V
2
1
1
2
Features
• Glass passivated chip junction
• High breakdown voltage capability
• Very fast reverse recovery time
• Fast forward recovery time
• High efficiency, low switching losses
• Meets MSL level 1, per J-STD-020C
PIN 1
PIN 2
DTV32
DTV32F
PIN 1
CASE
PIN 2
Typical Applications
For use in high resolution display TV and monitor hor-
izontal deflection application
Maximum Ratings
(T
C
= 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Maximum average forward
rectified current (fig. 1)
Peak forward surge current
Test condition
Pr
od
uc
t
Mechanical Data
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
Value
1500
1050
1500
10
130
T
J
, T
STG
V
ISOL
-55 to +150
4500
(1)
3500
(2)
1500
(3)
Case:
JEDEC TO-220AC, ITO-220AC
Terminals:
Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
Mounting Torque:
10 in-lbs Maximum
Epoxy meets UL-94V-0 Flammability rating
Unit
V
V
V
A
A
Maximum DC blocking voltage
N
ew
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method) at T
C
= 100 °C
Operating junction and storage
temperature range
RMS Isolation voltage (DTV32F with t = 1.0 second, RH
30 %
types only) from terminals to
heatsink
°C
V
Document Number 88575
02-Nov-04
www.vishay.com
1

DTV32F-E3 Related Products

DTV32F-E3 DTV32FE3 DTV32E3
Description Rectifier Diode, 1 Element, 10A, 1500V V(RRM), Rectifier Diode, 1 Phase, 1 Element, 10A, 1500V V(RRM), Silicon, TO-220AC, PLASTIC, ITO-220AC, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 10A, 1500V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-2
Is it Rohs certified? conform to conform to conform to
Maker Vishay Vishay Vishay
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum non-repetitive peak forward current 130 A 130 A 130 A
Number of components 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 10 A 10 A 10 A
Maximum repetitive peak reverse voltage 1500 V 1500 V 1500 V
Maximum reverse recovery time 0.175 µs 0.175 µs 0.175 µs
surface mount NO NO NO
Base Number Matches 1 1 1
Parts packaging code - TO-220AC TO-220AC
package instruction - R-PSFM-T2 R-PSFM-T2
Contacts - 3 3
application - EFFICIENCY EFFICIENCY
Shell connection - ISOLATED CATHODE
Diode component materials - SILICON SILICON
JEDEC-95 code - TO-220AC TO-220AC
JESD-30 code - R-PSFM-T2 R-PSFM-T2
JESD-609 code - e3 e3
Phase - 1 1
Number of terminals - 2 2
Minimum operating temperature - -55 °C -55 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Certification status - Not Qualified Not Qualified
Terminal surface - MATTE TIN MATTE TIN
Terminal form - THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
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