HM50257CP-12 datasheet, PDF - EEWORLD Datasheet

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HM50257CP-12: DescriptionNibble Mode DRAM, 256KX1, 120ns, NMOS, PQCC18, PLASTIC, LCC-18; Categorystorage storage; File Size237KB，8 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HM50257CP-12 Overview

Nibble Mode DRAM, 256KX1, 120ns, NMOS, PQCC18, PLASTIC, LCC-18

HM50257CP-12 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Hitachi （Renesas ）
Parts packaging code	LCC
package instruction	QCCJ, LDCC18,.33X.53
Contacts	18
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	NIBBLE
Maximum access time	120 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	SEPARATE
JESD-30 code	R-PQCC-J18
JESD-609 code	e0
length	12.45 mm
memory density	262144 bit
Memory IC Type	NIBBLE MODE DRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	18
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC18,.33X.53
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	256
Maximum seat height	3.6 mm
Maximum slew rate	0.083 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	NMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.34 mm
Base Number Matches	1

HM50257CP-12 Related Products

	HM50257CP-12	HM50257CP-15	HM50257ZP-20	HM50257ZP-12	HM50257CP-20	HM50257ZP-15
Description	Nibble Mode DRAM, 256KX1, 120ns, NMOS, PQCC18, PLASTIC, LCC-18	Nibble Mode DRAM, 256KX1, 150ns, NMOS, PQCC18, PLASTIC, LCC-18	Nibble Mode DRAM, 256KX1, 200ns, NMOS, PZIP16, PLASTIC, ZIP-16	Nibble Mode DRAM, 256KX1, 120ns, NMOS, PZIP16, PLASTIC, ZIP-16	Nibble Mode DRAM, 256KX1, 200ns, NMOS, PQCC18, PLASTIC, LCC-18	Nibble Mode DRAM, 256KX1, 150ns, NMOS, PZIP16, PLASTIC, ZIP-16
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）
Parts packaging code	LCC	LCC	ZIP	ZIP	LCC	ZIP
package instruction	QCCJ, LDCC18,.33X.53	QCCJ, LDCC18,.33X.53	ZIP, ZIP16,.1	ZIP, ZIP16,.1	QCCJ, LDCC18,.33X.53	ZIP, ZIP16,.1
Contacts	18	18	16	16	18	16
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	NIBBLE	NIBBLE	NIBBLE	NIBBLE	NIBBLE	NIBBLE
Maximum access time	120 ns	150 ns	200 ns	120 ns	200 ns	150 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-PQCC-J18	R-PQCC-J18	R-PZIP-T16	R-PZIP-T16	R-PQCC-J18	R-PZIP-T16
JESD-609 code	e0	e0	e0	e0	e0	e0
length	12.45 mm	12.45 mm	20.13 mm	20.13 mm	12.45 mm	20.13 mm
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM
memory width	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	18	18	16	16	18	16
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QCCJ	QCCJ	ZIP	ZIP	QCCJ	ZIP
Encapsulate equivalent code	LDCC18,.33X.53	LDCC18,.33X.53	ZIP16,.1	ZIP16,.1	LDCC18,.33X.53	ZIP16,.1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	IN-LINE	IN-LINE	CHIP CARRIER	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	256	256	256	256	256	256
Maximum seat height	3.6 mm	3.6 mm	8.3 mm	8.3 mm	3.6 mm	8.3 mm
Maximum slew rate	0.083 mA	0.07 mA	0.055 mA	0.083 mA	0.055 mA	0.07 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	NO	NO	YES	NO
technology	NMOS	NMOS	NMOS	NMOS	NMOS	NMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	J BEND	THROUGH-HOLE	THROUGH-HOLE	J BEND	THROUGH-HOLE
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	ZIG-ZAG	ZIG-ZAG	QUAD	ZIG-ZAG
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	7.34 mm	7.34 mm	2.85 mm	2.85 mm	7.34 mm	2.85 mm
Base Number Matches	1	1	1	1	1	1

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