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HM50257ZP-15

Description
Nibble Mode DRAM, 256KX1, 150ns, NMOS, PZIP16, PLASTIC, ZIP-16
Categorystorage    storage   
File Size237KB,8 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

HM50257ZP-15 Overview

Nibble Mode DRAM, 256KX1, 150ns, NMOS, PZIP16, PLASTIC, ZIP-16

HM50257ZP-15 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeZIP
package instructionZIP, ZIP16,.1
Contacts16
Reach Compliance Codeunknown
ECCN codeEAR99
access modeNIBBLE
Maximum access time150 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeSEPARATE
JESD-30 codeR-PZIP-T16
JESD-609 codee0
length20.13 mm
memory density262144 bit
Memory IC TypeNIBBLE MODE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals16
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeZIP
Encapsulate equivalent codeZIP16,.1
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle256
Maximum seat height8.3 mm
Maximum slew rate0.07 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyNMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch1.27 mm
Terminal locationZIG-ZAG
Maximum time at peak reflow temperatureNOT SPECIFIED
width2.85 mm
Base Number Matches1

HM50257ZP-15 Related Products

HM50257ZP-15 HM50257CP-15 HM50257ZP-20 HM50257CP-12 HM50257ZP-12 HM50257CP-20
Description Nibble Mode DRAM, 256KX1, 150ns, NMOS, PZIP16, PLASTIC, ZIP-16 Nibble Mode DRAM, 256KX1, 150ns, NMOS, PQCC18, PLASTIC, LCC-18 Nibble Mode DRAM, 256KX1, 200ns, NMOS, PZIP16, PLASTIC, ZIP-16 Nibble Mode DRAM, 256KX1, 120ns, NMOS, PQCC18, PLASTIC, LCC-18 Nibble Mode DRAM, 256KX1, 120ns, NMOS, PZIP16, PLASTIC, ZIP-16 Nibble Mode DRAM, 256KX1, 200ns, NMOS, PQCC18, PLASTIC, LCC-18
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas )
Parts packaging code ZIP LCC ZIP LCC ZIP LCC
package instruction ZIP, ZIP16,.1 QCCJ, LDCC18,.33X.53 ZIP, ZIP16,.1 QCCJ, LDCC18,.33X.53 ZIP, ZIP16,.1 QCCJ, LDCC18,.33X.53
Contacts 16 18 16 18 16 18
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode NIBBLE NIBBLE NIBBLE NIBBLE NIBBLE NIBBLE
Maximum access time 150 ns 150 ns 200 ns 120 ns 120 ns 200 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE
JESD-30 code R-PZIP-T16 R-PQCC-J18 R-PZIP-T16 R-PQCC-J18 R-PZIP-T16 R-PQCC-J18
JESD-609 code e0 e0 e0 e0 e0 e0
length 20.13 mm 12.45 mm 20.13 mm 12.45 mm 20.13 mm 12.45 mm
memory density 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit
Memory IC Type NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM
memory width 1 1 1 1 1 1
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 16 18 16 18 16 18
word count 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
character code 256000 256000 256000 256000 256000 256000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 256KX1 256KX1 256KX1 256KX1 256KX1 256KX1
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code ZIP QCCJ ZIP QCCJ ZIP QCCJ
Encapsulate equivalent code ZIP16,.1 LDCC18,.33X.53 ZIP16,.1 LDCC18,.33X.53 ZIP16,.1 LDCC18,.33X.53
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE CHIP CARRIER IN-LINE CHIP CARRIER IN-LINE CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 256 256 256 256 256 256
Maximum seat height 8.3 mm 3.6 mm 8.3 mm 3.6 mm 8.3 mm 3.6 mm
Maximum slew rate 0.07 mA 0.07 mA 0.055 mA 0.083 mA 0.083 mA 0.055 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO YES NO YES NO YES
technology NMOS NMOS NMOS NMOS NMOS NMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE J BEND THROUGH-HOLE J BEND THROUGH-HOLE J BEND
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location ZIG-ZAG QUAD ZIG-ZAG QUAD ZIG-ZAG QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 2.85 mm 7.34 mm 2.85 mm 7.34 mm 2.85 mm 7.34 mm
Base Number Matches 1 1 1 1 1 1
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