IRFZ46STRL datasheet, PDF - EEWORLD Datasheet

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IRFZ46STRL: DescriptionPower Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size356KB，10 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRFZ46STRL Overview

Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

IRFZ46STRL Parametric

Parameter Name	Attribute value
Maker	International Rectifier （ Infineon ）
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.024 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	150 W
Maximum pulsed drain current (IDM)	220 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 9.922A

IRFZ46S/L

HEXFET

Power MOSFET

Advanced Process Technology

Surface Mount (IRFZ46S)

Low-profile through-hole (IRFZ46L)

175°C Operating Temperature

Fast Switching

DSS

= 50V

DS(on)

= 0.024Ω

= 72A

Description

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D

Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ46L) is available for low-

profile applications.

D 2 Pak

T O -2 6 2

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

220

3.7

150

1.0

± 20

100

4.5

-55 to + 175

300 (1.6mm from case )

Units

W/°C

V/ns

°C

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

1.0

Units

°C/W

8/25/97

IRFZ46STRL Related Products

	IRFZ46STRL	IRFZ46STRR
Description	Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN	Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	D2PAK	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	4	4
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	50 V	50 V
Maximum drain current (ID)	50 A	50 A
Maximum drain-source on-resistance	0.024 Ω	0.024 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	150 W	150 W
Maximum pulsed drain current (IDM)	220 A	220 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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