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AT-64023G

Description
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, S Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size65KB,4 Pages
ManufacturerBroadcom
Download Datasheet Parametric Compare View All

AT-64023G Overview

RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, S Band, Silicon, NPN,

AT-64023G Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-CDFM-F2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
highest frequency bandS BAND
JESD-30 codeR-CDFM-F2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

AT-64023G Related Products

AT-64023G
Description RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, S Band, Silicon, NPN,
Is it Rohs certified? incompatible
package instruction FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code compliant
ECCN code EAR99
Other features HIGH RELIABILITY
Shell connection ISOLATED
Maximum collector current (IC) 0.2 A
Collector-emitter maximum voltage 20 V
Configuration SINGLE
highest frequency band S BAND
JESD-30 code R-CDFM-F2
JESD-609 code e0
Number of components 1
Number of terminals 2
Maximum operating temperature 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type NPN
Certification status Not Qualified
surface mount YES
Terminal surface Tin/Lead (Sn/Pb)
Terminal form FLAT
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON
Base Number Matches 1
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