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HZS30NB3

Description
29.09 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
CategoryDiscrete semiconductor    diode   
File Size53KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HZS30NB3 Overview

29.09 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34

HZS30NB3 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeDO-34
package instructionMHD, 2 PIN
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW LEAKAGE, LOW ZENER IMPEDANCE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance55 Ω
JEDEC-95 codeDO-34
JESD-30 codeO-XALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage29.09 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance2.51%
Working test current5 mA
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