IRFU120 datasheet, PDF - EEWORLD Datasheet

IRFU120: Description8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA; CategoryDiscrete semiconductor The transistor; File Size169KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	210 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	8.4 A
Maximum drain current (ID)	7.7 A
Maximum drain-source on-resistance	0.27 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	42 W
Maximum power dissipation(Abs)	42 W
Maximum pulsed drain current (IDM)	31 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	IRFU120	IRFR120TR	IRFU120TR
Description	8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Is it Rohs certified?	incompatible	incompatible	-
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	-
Reach Compliance Code	compliant	compli	-
ECCN code	EAR99	EAR99	-
Shell connection	DRAIN	DRAIN	-
Configuration	SINGLE	SINGLE	-
Minimum drain-source breakdown voltage	100 V	100 V	-
Maximum drain current (ID)	7.7 A	7.7 A	-
Maximum drain-source on-resistance	0.27 Ω	0.27 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-251AA	TO-252AA	-
JESD-30 code	R-PSIP-T3	R-PSSO-G2	-
JESD-609 code	e0	e0	-
Number of components	1	1	-
Number of terminals	3	2	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	IN-LINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	245	260	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum power consumption environment	42 W	42 W	-
Maximum pulsed drain current (IDM)	31 A	34 A	-
Certification status	Not Qualified	Not Qualified	-
surface mount	NO	YES	-
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD	-
Terminal form	THROUGH-HOLE	GULL WING	-
Terminal location	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	30	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-
Base Number Matches	1	1	-

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