IRFR120TR datasheet, PDF - EEWORLD Datasheet

IRFR120TR: Description8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA; CategoryDiscrete semiconductor The transistor; File Size169KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

Download Datasheet Parametric Compare View All

IRFR120TR Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	IRFR120TR	-	-	View	Buy Now

8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	7.7 A
Maximum drain-source on-resistance	0.27 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	42 W
Maximum pulsed drain current (IDM)	34 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	IRFR120TR	IRFU120	IRFU120TR
Description	8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Is it Rohs certified?	incompatible	incompatible	-
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	-
Reach Compliance Code	compli	compliant	-
ECCN code	EAR99	EAR99	-
Shell connection	DRAIN	DRAIN	-
Configuration	SINGLE	SINGLE	-
Minimum drain-source breakdown voltage	100 V	100 V	-
Maximum drain current (ID)	7.7 A	7.7 A	-
Maximum drain-source on-resistance	0.27 Ω	0.27 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-252AA	TO-251AA	-
JESD-30 code	R-PSSO-G2	R-PSIP-T3	-
JESD-609 code	e0	e0	-
Number of components	1	1	-
Number of terminals	2	3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	IN-LINE	-
Peak Reflow Temperature (Celsius)	260	245	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum power consumption environment	42 W	42 W	-
Maximum pulsed drain current (IDM)	34 A	31 A	-
Certification status	Not Qualified	Not Qualified	-
surface mount	YES	NO	-
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	-
Terminal form	GULL WING	THROUGH-HOLE	-
Terminal location	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	30	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-
Base Number Matches	1	1	-

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components