MRF7S38040HSR3 datasheet, PDF - EEWORLD Datasheet

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MRF7S38040HSR3: DescriptionRF MOSFET Transistors 3600MHZ 8W 30V; CategoryDiscrete semiconductor The transistor; File Size560KB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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RF MOSFET Transistors 3600MHZ 8W 30V

MRF7S38040HSR3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	FLANGE MOUNT, R-XDFM-F2
Contacts	3
Manufacturer packaging code	CASE 465J-02
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-XDFM-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	225 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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Freescale Semiconductor

Technical Data

Document Number: MRF7S38040H

Rev. 0, 8/2007

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for WiMAX base station applications with frequencies up to

3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class

AB and Class C amplifier applications.

•

Typical WiMAX Performance: V

= 30 Volts, I

= 450 mA, P

out

8 Watts Avg., f = 3400 - 3600 MHz, 802.16d, 64 QAM

, 4 bursts, 7 MHz

Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on

CCDF.

Power Gain — 14 dB

Drain Efficiency — 15.6%

Device Output Signal PAR — 8.4 dB @ 0.01% Probability on CCDF

ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 40 Watts CW

Peak Tuned Output Power

•

out

@ 1 dB Compression Point

40 Watts CW

Features

•

Characterized with Series Equivalent Large - Signal Impedance Parameters

•

Internally Matched for Ease of Use

•

Integrated ESD Protection

•

Greater Negative Gate - Source Voltage Range for Improved Class C

Operation

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

MRF7S38040HR3

MRF7S38040HSR3

3400 - 3600 MHz, 8 W AVG., 30 V

WiMAX

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465I - 02, STYLE 1

NI - 400 - 240

MRF7S38040HR3

CASE 465J - 02, STYLE 1

NI - 400S - 240

MRF7S38040HSR3

Table 1. Maximum Ratings

Rating

Drain - Source Voltage

Gate - Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

stg

Value

- 0.5, +65

- 6.0, +10

32, +0

- 65 to +150

150

225

Unit

Vdc

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 96°C, 39 W CW

Case Temperature 75°C, 8 W CW

Symbol

θJC

Value

(2,3)

0.78

0.83

Unit

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF7S38040HR3 MRF7S38040HSR3

RF Device Data

Freescale Semiconductor

MRF7S38040HSR3 Related Products

	MRF7S38040HSR3	MRF7S38040HR3
Description	RF MOSFET Transistors 3600MHZ 8W 30V	RF MOSFET Transistors 3600MHZ 8W 28V
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-XDFM-F2	FLANGE MOUNT, R-XDFM-F2
Contacts	3	3
Manufacturer packaging code	CASE 465J-02	CASE 465I-02
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND	S BAND
JESD-30 code	R-XDFM-F2	R-XDFM-F2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	225 °C	225 °C
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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