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MRF7S38040HR3

Description
RF MOSFET Transistors 3600MHZ 8W 28V
CategoryDiscrete semiconductor    The transistor   
File Size560KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MRF7S38040HR3 Overview

RF MOSFET Transistors 3600MHZ 8W 28V

MRF7S38040HR3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionFLANGE MOUNT, R-XDFM-F2
Contacts3
Manufacturer packaging codeCASE 465I-02
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-XDFM-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Freescale Semiconductor
Technical Data
Document Number: MRF7S38040H
Rev. 0, 8/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
Typical WiMAX Performance: V
DD
= 30 Volts, I
DQ
= 450 mA, P
out
=
8 Watts Avg., f = 3400 - 3600 MHz, 802.16d, 64 QAM
3
/
4
, 4 bursts, 7 MHz
Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 14 dB
Drain Efficiency — 15.6%
Device Output Signal PAR — 8.4 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 40 Watts CW
Peak Tuned Output Power
P
out
@ 1 dB Compression Point
w
40 Watts CW
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF7S38040HR3
MRF7S38040HSR3
3400 - 3600 MHz, 8 W AVG., 30 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465I - 02, STYLE 1
NI - 400 - 240
MRF7S38040HR3
CASE 465J - 02, STYLE 1
NI - 400S - 240
MRF7S38040HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 96°C, 39 W CW
Case Temperature 75°C, 8 W CW
Symbol
R
θJC
Value
(2,3)
0.78
0.83
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S38040HR3 MRF7S38040HSR3
1
RF Device Data
Freescale Semiconductor

MRF7S38040HR3 Related Products

MRF7S38040HR3 MRF7S38040HSR3
Description RF MOSFET Transistors 3600MHZ 8W 28V RF MOSFET Transistors 3600MHZ 8W 30V
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction FLANGE MOUNT, R-XDFM-F2 FLANGE MOUNT, R-XDFM-F2
Contacts 3 3
Manufacturer packaging code CASE 465I-02 CASE 465J-02
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band S BAND S BAND
JESD-30 code R-XDFM-F2 R-XDFM-F2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 225 °C 225 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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