MOSFET N-channel 60 V 15 mOhm MOSFET
Parameter Name | Attribute value |
Product Category | MOSFET |
Manufacturer | NXP |
RoHS | Details |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | LFPAK56-5 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 68 A |
Rds On - Drain-Source Resistance | 10 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 54.5 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Configuration | Single |
Packaging | Reel |
Fall Time | 24 ns |
Pd - Power Dissipation | 195 W |
Rise Time | 21 ns |
Factory Pack Quantity | 1500 |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 43 ns |
Typical Turn-On Delay Time | 11 ns |