MMBT2907LT1 datasheet, PDF - EEWORLD Datasheet

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MMBT2907LT1: Description600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size150KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MMBT2907LT1 Overview

600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR

MMBT2907LT1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	CASE 318-08
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-based maximum capacity	8 pF
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	75
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	0.225 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	100 ns
Maximum opening time (tons)	45 ns
VCEsat-Max	1.6 V

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MMBT2907LT1/D

General Purpose Transistors

PNP Silicon

BASE

COLLECTOR

MMBT2907LT1

MMBT2907ALT1*

*Motorola Preferred Device

MAXIMUM RATINGS

Rating

Collector – Emitter Voltage

Collector – Base Voltage

Emitter – Base Voltage

Collector Current — Continuous

Symbol

VCEO

VCBO

VEBO

2907

–40

–60

–5.0

–600

EMITTER

2907A

–60

Unit

Vdc

mAdc

CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

Symbol

Max

225

1.8

556

300

2.4

TJ, Tstg

417

– 55 to +150

Unit

mW/°C

°C/W

mW/°C

°C/W

°C

DEVICE MARKING

MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(3)

(IC = –10 mAdc, IB = 0)

Collector – Base Breakdown Voltage (IC = –10

Adc, IE = 0)

Emitter – Base Breakdown Voltage (IE = –10

Adc, IC = 0)

Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc)

Collector Cutoff Current

(VCB = –50 Vdc, IE = 0)

MMBT2907

MMBT2907A

MMBT2907

MMBT2907A

V(BR)CEO

MMBT2907

MMBT2907A

V(BR)CBO

V(BR)EBO

ICEX

ICBO

—

–0.020

–0.010

–20

–10

–50

nAdc

–40

–60

–5.0

—

–50

Vdc

nAdc

µAdc

Vdc

(VCB = –50 Vdc, IE = 0, TA = 125°C)

Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc)

1. FR– 5 = 1.0

0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

Thermal Clad is a trademark of the Bergquist Company.

Preferred

devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

MMBT2907LT1 Related Products

	MMBT2907LT1	MMBT2907ALT1
Description	600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR	PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	incompatible	incompatible
Maker	Motorola ( NXP )	Motorola ( NXP )
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow	unknow
Maximum collector current (IC)	0.6 A	0.6 A
Collector-based maximum capacity	8 pF	8 pF
Collector-emitter maximum voltage	40 V	60 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	75	100
JEDEC-95 code	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power consumption environment	0.225 W	0.225 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz
Maximum off time (toff)	100 ns	100 ns
Maximum opening time (tons)	45 ns	45 ns
VCEsat-Max	1.6 V	1.6 V

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