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K4B2G1646

Showing 16 Results for K4B2G1646, including K4B2G1646B,K4B2G1646B-HCF80, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
K4B2G1646B SAMSUNG Consumer Memory Download
K4B2G1646B-HCF80 SAMSUNG DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Download
K4B2G1646B-HCF8T SAMSUNG DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96, Download
K4B2G1646C SAMSUNG Consumer Memory Download
K4B2G1646C-HCF8 SAMSUNG DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96 Download
K4B2G1646C-HCF80 SAMSUNG DDR DRAM, 128MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Download
K4B2G1646C-HCF8000 SAMSUNG 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) Download
K4B2G1646C-HCH90 SAMSUNG 128MX16 DDR DRAM, 0.255ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Download
K4B2G1646C-HCK00 SAMSUNG 128MX16 DDR DRAM, 0.225ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Download
K4B2G1646C-HCMA0 SAMSUNG 128MX16 DDR DRAM, 0.195ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Download
K4B2G1646C-HCNB0 SAMSUNG DDR DRAM, 128MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Download
K4B2G1646F SAMSUNG 96FBGA with Lead-Free & Halogen-Free Download
K4B2G1646F-BMK0 SAMSUNG 96FBGA with Lead-Free & Halogen-Free Download
K4B2G1646F-BMMA SAMSUNG 96FBGA with Lead-Free & Halogen-Free Download
K4B2G1646F-BYMA SAMSUNG 96FBGA with Lead-Free & Halogen-Free Download
K4B2G1646Q-BCK0 SAMSUNG DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Download
K4B2G1646 Related Product Datasheets:
Part Number Datasheet
K4B2G1646C-HCF8 、 K4B2G1646C-HCF80 、 K4B2G1646C-HCH9 、 K4B2G1646C-HCH90 、 K4B2G1646C-HCK0 、 K4B2G1646C-HCK00 、 K4B2G1646C-HCMA 、 K4B2G1646C-HCMA0 、 K4B2G1646C-HCNB 、 K4B2G1646C-HCNB0 Download Datasheet
K4B2G1646Q-BCH90 、 K4B2G1646Q-BCK0 、 K4B2G1646Q-BCK00 、 K4B2G1646Q-BCNB0 、 K4B2G1646Q-BIH90 Download Datasheet
K4B2G1646B-HCF70 、 K4B2G1646B-HCF80 、 K4B2G1646B-HCH90 、 K4B2G1646B-HCK00 Download Datasheet
K4B2G1646B-HIH9 、 K4B2G1646B-HIH90 、 K4B2G1646B-HPH90 Download Datasheet
K4B2G1646F-BCMA0 、 K4B2G1646F-BCK00 Download Datasheet
K4B2G1646B 、 K4B2G1646C Download Datasheet
K4B2G1646F-BMK00 、 K4B2G1646F-BYMA0 Download Datasheet
K4B2G1646B-HCF8T Download Datasheet
K4B2G1646C-HCF8000 Download Datasheet
K4B2G1646 Related Products:
Part Number K4B2G1646C-HCF8 K4B2G1646C-HCF80 K4B2G1646C-HCH9 K4B2G1646C-HCH90 K4B2G1646C-HCK0 K4B2G1646C-HCK00 K4B2G1646C-HCMA K4B2G1646C-HCMA0 K4B2G1646C-HCNB K4B2G1646C-HCNB0
Description DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96 DDR DRAM, 128MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, 128MX16 DDR DRAM, 0.255ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96 128MX16 DDR DRAM, 0.225ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96, 128MX16 DDR DRAM, 0.195ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96, DDR DRAM, 128MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to conform to
package instruction FBGA, BGA96,9X16,32 HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 FBGA, BGA96,9X16,32 TFBGA, BGA96,9X16,32 FBGA, BGA96,9X16,32 HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 FBGA, BGA96,9X16,32 TFBGA, BGA96,9X16,32 FBGA, BGA96,9X16,32 TFBGA,
Reach Compliance Code compliant compliant compliant compliant compliant compliant compli compliant compli unknown
JESD-30 code R-PBGA-B96 R-PBGA-B96 R-PBGA-B96 R-PBGA-B96 R-PBGA-B96 R-PBGA-B96 R-PBGA-B96 R-PBGA-B96 R-PBGA-B96 R-PBGA-B96
memory density 2147483648 bit 2147483648 bit 2147483648 bit 2147483648 bit 2147483648 bit 2147483648 bit 2147483648 bi 2147483648 bit 2147483648 bi 2147483648 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
Number of terminals 96 96 96 96 96 96 96 96 96 96
word count 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words
character code 128000000 128000000 128000000 128000000 128000000 128000000 128000000 128000000 128000000 128000000
organize 128MX16 128MX16 128MX16 128MX16 128MX16 128MX16 128MX16 128MX16 128MX16 128MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code FBGA TFBGA FBGA TFBGA FBGA TFBGA FBGA TFBGA FBGA TFBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Nominal supply voltage (Vsup) 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
surface mount YES YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG - SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Maximum access time 0.3 ns 0.3 ns 0.255 ns 0.255 ns 0.225 ns 0.225 ns 0.195 ns 0.195 ns 0.18 ns -
Maximum clock frequency (fCLK) 533 MHz 533 MHz 667 MHz 667 MHz 800 MHz 800 MHz 933 MHz 933 MHz 1066 MHz -
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON -
interleaved burst length 4,8 4,8 4,8 4,8 4,8 4,8 4,8 4,8 4,8 -
memory width 16 16 16 16 16 - 16 - 16 16
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C -
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE -
Encapsulate equivalent code BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32 -
power supply 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
refresh cycle 8192 8192 8192 8192 8192 8192 8192 8192 8192 -
Continuous burst length 4,8 4,8 4,8 4,8 4,8 4,8 4,8 4,8 4,8 -
Maximum standby current 0.012 A 0.012 A 0.012 A 0.012 A 0.012 A 0.012 A 0.012 A 0.012 A 0.015 A -
Maximum slew rate 0.22 mA 0.22 mA 0.245 mA 0.245 mA 0.27 mA 0.27 mA 0.285 mA 0.285 mA 0.3 mA -
Temperature level OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER -

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