Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
K4B2G1646B | SAMSUNG | Consumer Memory | Download |
K4B2G1646B-HCF80 | SAMSUNG | DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Download |
K4B2G1646B-HCF8T | SAMSUNG | DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96, | Download |
K4B2G1646C | SAMSUNG | Consumer Memory | Download |
K4B2G1646C-HCF8 | SAMSUNG | DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96 | Download |
K4B2G1646C-HCF80 | SAMSUNG | DDR DRAM, 128MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Download |
K4B2G1646C-HCF8000 | SAMSUNG | 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) | Download |
K4B2G1646C-HCH90 | SAMSUNG | 128MX16 DDR DRAM, 0.255ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Download |
K4B2G1646C-HCK00 | SAMSUNG | 128MX16 DDR DRAM, 0.225ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Download |
K4B2G1646C-HCMA0 | SAMSUNG | 128MX16 DDR DRAM, 0.195ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Download |
K4B2G1646C-HCNB0 | SAMSUNG | DDR DRAM, 128MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Download |
K4B2G1646F | SAMSUNG | 96FBGA with Lead-Free & Halogen-Free | Download |
K4B2G1646F-BMK0 | SAMSUNG | 96FBGA with Lead-Free & Halogen-Free | Download |
K4B2G1646F-BMMA | SAMSUNG | 96FBGA with Lead-Free & Halogen-Free | Download |
K4B2G1646F-BYMA | SAMSUNG | 96FBGA with Lead-Free & Halogen-Free | Download |
K4B2G1646Q-BCK0 | SAMSUNG | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Download |
Part Number | Datasheet |
---|---|
K4B2G1646C-HCF8 、 K4B2G1646C-HCF80 、 K4B2G1646C-HCH9 、 K4B2G1646C-HCH90 、 K4B2G1646C-HCK0 、 K4B2G1646C-HCK00 、 K4B2G1646C-HCMA 、 K4B2G1646C-HCMA0 、 K4B2G1646C-HCNB 、 K4B2G1646C-HCNB0 | Download Datasheet |
K4B2G1646Q-BCH90 、 K4B2G1646Q-BCK0 、 K4B2G1646Q-BCK00 、 K4B2G1646Q-BCNB0 、 K4B2G1646Q-BIH90 | Download Datasheet |
K4B2G1646B-HCF70 、 K4B2G1646B-HCF80 、 K4B2G1646B-HCH90 、 K4B2G1646B-HCK00 | Download Datasheet |
K4B2G1646B-HIH9 、 K4B2G1646B-HIH90 、 K4B2G1646B-HPH90 | Download Datasheet |
K4B2G1646F-BCMA0 、 K4B2G1646F-BCK00 | Download Datasheet |
K4B2G1646B 、 K4B2G1646C | Download Datasheet |
K4B2G1646F-BMK00 、 K4B2G1646F-BYMA0 | Download Datasheet |
K4B2G1646B-HCF8T | Download Datasheet |
K4B2G1646C-HCF8000 | Download Datasheet |
Part Number | K4B2G1646C-HCF8 | K4B2G1646C-HCF80 | K4B2G1646C-HCH9 | K4B2G1646C-HCH90 | K4B2G1646C-HCK0 | K4B2G1646C-HCK00 | K4B2G1646C-HCMA | K4B2G1646C-HCMA0 | K4B2G1646C-HCNB | K4B2G1646C-HCNB0 |
---|---|---|---|---|---|---|---|---|---|---|
Description | DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96 | DDR DRAM, 128MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, | 128MX16 DDR DRAM, 0.255ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96 | 128MX16 DDR DRAM, 0.225ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96, | 128MX16 DDR DRAM, 0.195ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96, | DDR DRAM, 128MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to |
package instruction | FBGA, BGA96,9X16,32 | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | FBGA, BGA96,9X16,32 | TFBGA, BGA96,9X16,32 | FBGA, BGA96,9X16,32 | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | FBGA, BGA96,9X16,32 | TFBGA, BGA96,9X16,32 | FBGA, BGA96,9X16,32 | TFBGA, |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compli | compliant | compli | unknown |
JESD-30 code | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 |
memory density | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bi | 2147483648 bit | 2147483648 bi | 2147483648 bit |
Memory IC Type | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
Number of terminals | 96 | 96 | 96 | 96 | 96 | 96 | 96 | 96 | 96 | 96 |
word count | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words |
character code | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 |
organize | 128MX16 | 128MX16 | 128MX16 | 128MX16 | 128MX16 | 128MX16 | 128MX16 | 128MX16 | 128MX16 | 128MX16 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | FBGA | TFBGA | FBGA | TFBGA | FBGA | TFBGA | FBGA | TFBGA | FBGA | TFBGA |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | GRID ARRAY, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
Nominal supply voltage (Vsup) | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Terminal form | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maker | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | - | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |
Maximum access time | 0.3 ns | 0.3 ns | 0.255 ns | 0.255 ns | 0.225 ns | 0.225 ns | 0.195 ns | 0.195 ns | 0.18 ns | - |
Maximum clock frequency (fCLK) | 533 MHz | 533 MHz | 667 MHz | 667 MHz | 800 MHz | 800 MHz | 933 MHz | 933 MHz | 1066 MHz | - |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | - |
interleaved burst length | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | - |
memory width | 16 | 16 | 16 | 16 | 16 | - | 16 | - | 16 | 16 |
Maximum operating temperature | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | - |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - |
Encapsulate equivalent code | BGA96,9X16,32 | BGA96,9X16,32 | BGA96,9X16,32 | BGA96,9X16,32 | BGA96,9X16,32 | BGA96,9X16,32 | BGA96,9X16,32 | BGA96,9X16,32 | BGA96,9X16,32 | - |
power supply | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | - |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
refresh cycle | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | - |
Continuous burst length | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | - |
Maximum standby current | 0.012 A | 0.012 A | 0.012 A | 0.012 A | 0.012 A | 0.012 A | 0.012 A | 0.012 A | 0.015 A | - |
Maximum slew rate | 0.22 mA | 0.22 mA | 0.245 mA | 0.245 mA | 0.27 mA | 0.27 mA | 0.285 mA | 0.285 mA | 0.3 mA | - |
Temperature level | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | - |