DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | SAMSUNG |
Parts packaging code | BGA |
package instruction | TFBGA, BGA96,9X16,32 |
Contacts | 96 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | MULTI BANK PAGE BURST |
Maximum access time | 0.3 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 533 MHz |
I/O type | COMMON |
interleaved burst length | 8 |
JESD-30 code | R-PBGA-B96 |
JESD-609 code | e1 |
length | 13.3 mm |
memory density | 2147483648 bit |
Memory IC Type | DDR DRAM |
memory width | 16 |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 96 |
word count | 134217728 words |
character code | 128000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | |
organize | 128MX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA96,9X16,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 1.5 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Maximum seat height | 1.2 mm |
self refresh | YES |
Continuous burst length | 8 |
Maximum standby current | 0.012 A |
Maximum slew rate | 0.28 mA |
Maximum supply voltage (Vsup) | 1.575 V |
Minimum supply voltage (Vsup) | 1.425 V |
Nominal supply voltage (Vsup) | 1.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | OTHER |
Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 9 mm |
Base Number Matches | 1 |