K4B2G1646C-HCK0 datasheet, PDF

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K4B2G1646C-HCK0: DescriptionDDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96; Categorystorage storage; File Size2MB，64 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4B2G1646C-HCK0 Overview

DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96

K4B2G1646C-HCK0 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	FBGA, BGA96,9X16,32
Reach Compliance Code	compliant
Maximum access time	0.225 ns
Maximum clock frequency (fCLK)	800 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B96
memory density	2147483648 bit
Memory IC Type	DDR DRAM
memory width	16
Number of terminals	96
word count	134217728 words
character code	128000000
Maximum operating temperature	85 °C
Minimum operating temperature
organize	128MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA96,9X16,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	4,8
Maximum standby current	0.012 A
Maximum slew rate	0.27 mA
Nominal supply voltage (Vsup)	1.5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

K4B2G1646C-HCK0 Related Products

	K4B2G1646C-HCK0	K4B2G1646C-HCF8	K4B2G1646C-HCF80	K4B2G1646C-HCK00	K4B2G1646C-HCMA0	K4B2G1646C-HCH90	K4B2G1646C-HCNB0	K4B2G1646C-HCH9	K4B2G1646C-HCMA	K4B2G1646C-HCNB
Description	DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96	DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96	DDR DRAM, 128MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	128MX16 DDR DRAM, 0.225ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	128MX16 DDR DRAM, 0.195ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	128MX16 DDR DRAM, 0.255ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	DDR DRAM, 128MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96,	DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96,	DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	FBGA, BGA96,9X16,32	FBGA, BGA96,9X16,32	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	TFBGA, BGA96,9X16,32	TFBGA, BGA96,9X16,32	TFBGA,	FBGA, BGA96,9X16,32	FBGA, BGA96,9X16,32	FBGA, BGA96,9X16,32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	unknown	compliant	compli	compli
JESD-30 code	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96
memory density	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bi	2147483648 bi
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
Number of terminals	96	96	96	96	96	96	96	96	96	96
word count	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words
character code	128000000	128000000	128000000	128000000	128000000	128000000	128000000	128000000	128000000	128000000
organize	128MX16	128MX16	128MX16	128MX16	128MX16	128MX16	128MX16	128MX16	128MX16	128MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	FBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	FBGA	FBGA	FBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
Nominal supply voltage (Vsup)	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maker	SAMSUNG	SAMSUNG	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Maximum access time	0.225 ns	0.3 ns	0.3 ns	0.225 ns	0.195 ns	0.255 ns	-	0.255 ns	0.195 ns	0.18 ns
Maximum clock frequency (fCLK)	800 MHz	533 MHz	533 MHz	800 MHz	933 MHz	667 MHz	-	667 MHz	933 MHz	1066 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8	4,8	4,8	4,8	-	4,8	4,8	4,8
memory width	16	16	16	-	-	16	16	16	16	16
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	-	85 °C	85 °C	85 °C
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE
Encapsulate equivalent code	BGA96,9X16,32	BGA96,9X16,32	BGA96,9X16,32	BGA96,9X16,32	BGA96,9X16,32	BGA96,9X16,32	-	BGA96,9X16,32	BGA96,9X16,32	BGA96,9X16,32
power supply	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	-	1.5 V	1.5 V	1.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	-	8192	8192	8192
Continuous burst length	4,8	4,8	4,8	4,8	4,8	4,8	-	4,8	4,8	4,8
Maximum standby current	0.012 A	0.012 A	0.012 A	0.012 A	0.012 A	0.012 A	-	0.012 A	0.012 A	0.015 A
Maximum slew rate	0.27 mA	0.22 mA	0.22 mA	0.27 mA	0.285 mA	0.245 mA	-	0.245 mA	0.285 mA	0.3 mA
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	-	OTHER	OTHER	OTHER

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