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K4B2G1646Q-BCK0

Description
DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Categorystorage    storage   
File Size733KB,67 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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K4B2G1646Q-BCK0 Overview

DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96

K4B2G1646Q-BCK0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSAMSUNG
Parts packaging codeBGA
package instructionTFBGA, BGA96,9X16,32
Contacts96
Reach Compliance Codecompliant
ECCN codeEAR99
access modeMULTI BANK PAGE BURST
Maximum access time0.225 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)800 MHz
I/O typeCOMMON
interleaved burst length8
JESD-30 codeR-PBGA-B96
length13.3 mm
memory density2147483648 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals96
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize128MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA96,9X16,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.5 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length8
Maximum standby current0.011 A
Maximum slew rate0.219 mA
Maximum supply voltage (Vsup)1.575 V
Minimum supply voltage (Vsup)1.425 V
Nominal supply voltage (Vsup)1.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.5 mm
Base Number Matches1

K4B2G1646Q-BCK0 Related Products

K4B2G1646Q-BCK0 K4B2G1646Q-BCK00 K4B2G1646Q-BCNB0 K4B2G1646Q-BCH90 K4B2G1646Q-BIH90
Description DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Parts packaging code BGA BGA BGA BGA BGA
package instruction TFBGA, BGA96,9X16,32 TFBGA, BGA96,9X16,32 TFBGA, BGA96,9X16,32 TFBGA, BGA96,9X16,32 TFBGA, BGA96,9X16,32
Contacts 96 96 96 96 96
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
access mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Maximum access time 0.225 ns 0.225 ns 0.18 ns 0.255 ns 0.255 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 800 MHz 800 MHz 1066 MHz 667 MHz 667 MHz
I/O type COMMON COMMON COMMON COMMON COMMON
interleaved burst length 8 8 8 8 8
JESD-30 code R-PBGA-B96 R-PBGA-B96 R-PBGA-B96 R-PBGA-B96 R-PBGA-B96
length 13.3 mm 13.3 mm 13.3 mm 13.3 mm 13.3 mm
memory density 2147483648 bit 2147483648 bit 2147483648 bit 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 16 16 16 16 16
Number of functions 1 1 1 1 1
Number of ports 1 1 1 1 1
Number of terminals 96 96 96 96 96
word count 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words
character code 128000000 128000000 128000000 128000000 128000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C
organize 128MX16 128MX16 128MX16 128MX16 128MX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA TFBGA TFBGA
Encapsulate equivalent code BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES YES
Continuous burst length 8 8 8 8 8
Maximum standby current 0.011 A 0.011 A 0.012 A 0.011 A 0.011 A
Maximum slew rate 0.219 mA 0.219 mA 0.245 mA 0.193 mA 0.193 mA
Maximum supply voltage (Vsup) 1.575 V 1.575 V 1.575 V 1.575 V 1.575 V
Minimum supply voltage (Vsup) 1.425 V 1.425 V 1.425 V 1.425 V 1.425 V
Nominal supply voltage (Vsup) 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
surface mount YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER INDUSTRIAL
Terminal form BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 7.5 mm 7.5 mm 7.5 mm 7.5 mm 7.5 mm

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