K4B2G1646B-HCF8T datasheet, PDF

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K4B2G1646B-HCF8T: DescriptionDDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96,; Categorystorage storage; File Size2MB，62 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4B2G1646B-HCF8T Overview

DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96,

K4B2G1646B-HCF8T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Reach Compliance Code	unknown
Maximum access time	0.3 ns
Maximum clock frequency (fCLK)	533 MHz
I/O type	COMMON
interleaved burst length	8
JESD-30 code	R-PBGA-B96
JESD-609 code	e1
memory density	2147483648 bit
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	3
Number of terminals	96
word count	134217728 words
character code	128000000
Maximum operating temperature	85 °C
Minimum operating temperature
organize	128MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA96,9X16,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	8
Maximum standby current	0.012 A
Maximum slew rate	0.28 mA
Nominal supply voltage (Vsup)	1.5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

K4B2G1646B-HCF8T Related Products

	K4B2G1646B-HCF8T	K4B2G0846B-HCF8T	K4B2G0446B-HCF8T
Description	DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96,	DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA78,	DDR DRAM, 512MX4, 0.3ns, CMOS, PBGA78,
Is it Rohs certified?	conform to	conform to	conform to
Maker	SAMSUNG	SAMSUNG	SAMSUNG
Reach Compliance Code	unknown	unknown	unknown
Maximum access time	0.3 ns	0.3 ns	0.3 ns
Maximum clock frequency (fCLK)	533 MHz	533 MHz	533 MHz
I/O type	COMMON	COMMON	COMMON
interleaved burst length	8	8	8
JESD-30 code	R-PBGA-B96	R-PBGA-B78	R-PBGA-B78
JESD-609 code	e1	e1	e1
memory density	2147483648 bit	2147483648 bit	2147483648 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	8	4
Humidity sensitivity level	3	3	3
Number of terminals	96	78	78
word count	134217728 words	268435456 words	536870912 words
character code	128000000	256000000	512000000
Maximum operating temperature	85 °C	85 °C	85 °C
organize	128MX16	256MX8	512MX4
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	FBGA	FBGA
Encapsulate equivalent code	BGA96,9X16,32	BGA78,9X13,32	BGA78,9X13,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
power supply	1.5 V	1.5 V	1.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192
Continuous burst length	8	8	8
Maximum standby current	0.012 A	0.012 A	0.012 A
Maximum slew rate	0.28 mA	0.23 mA	0.21 mA
Nominal supply voltage (Vsup)	1.5 V	1.5 V	1.5 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM
Base Number Matches	-	1	1

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