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IRFR430A

Showing 28 Results for IRFR430A, including IRFR430A,IRFR430A, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
IRFR430A International Rectifier ( Infineon ) SMPS MOSFET Download
IRFR430A Kersemi Electronic Power MOSFET Download
IRFR430A Fairchild Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Download
IRFR430A Vishay MOSFET N-Chan 500V 5.0 Amp Download
IRFR430A SAMSUNG Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Download
IRFR430APBF International Rectifier ( Infineon ) 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Download
IRFR430APBF Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Download
IRFR430APBF Vishay MOSFET N-Chan 500V 5.0 Amp Download
IRFR430ATR International Rectifier ( Infineon ) Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Download
IRFR430ATR Vishay MOSFET N-Chan 500V 5.0 Amp Download
IRFR430ATRA Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Download
IRFR430ATRL Kersemi Electronic Power MOSFET Download
IRFR430ATRL Vishay 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Download
IRFR430ATRL International Rectifier ( Infineon ) Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Download
IRFR430ATRLA Kersemi Electronic Power MOSFET Download
IRFR430ATRLPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Download
IRFR430ATRLPBF Vishay MOSFET N-Chan 500V 5.0 Amp Download
IRFR430ATRLPBFA Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Download
IRFR430ATRPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Download
IRFR430ATRPBF Vishay MOSFET N-Chan 500V 5.0 Amp Download
IRFR430ATRPBF International Rectifier(Infineon) Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 5A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 1.7Ω @ 3A, 10V Maximum power dissipation ( Ta=25°C): 110W Type: N-channel N-channel, 500V, 5A, 1.7Ω@10V Download
IRFR430ATRPBFA Kersemi Electronic Power MOSFET Download
IRFR430ATRR Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Download
IRFR430ATRR International Rectifier ( Infineon ) Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Download
IRFR430ATRR Vishay MOSFET N-Chan 500V 5.0 Amp Download
IRFR430ATRRA Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Download
IRFR430ATRRPBF Vishay MOSFET N-Chan 500V 5.0 Amp Download
IRFR430ATRRPBFA Kersemi Electronic 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Download
IRFR430A Related Product Datasheets:
Part Number Datasheet
IRFR430APBF 、 IRFR430ATRA 、 IRFR430ATRRA 、 IRFR430ATRRPBFA Download Datasheet
IRFR430ATRLPBF 、 IRFR430ATRPBF 、 IRFR430ATRRPBF Download Datasheet
IRFR430ATRL 、 IRFR430ATRLA Download Datasheet
IRFR430ATRLPBFA 、 IRFR430ATRR Download Datasheet
IRFR430A 、 IRFR430ATRPBF Download Datasheet
IRFR430ATR 、 IRFR430ATRLPBF Download Datasheet
IRFR430ATRPBF Download Datasheet
IRFR430ATRRPBF Download Datasheet
IRFR430ATRR Download Datasheet
IRFR430ATRR Download Datasheet
IRFR430A Related Products:
Part Number IRFR430ATRRPBFA IRFR430APBF IRFR430ATRA IRFR430ATRRA
Description 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Number of terminals 2 2 2 2
Minimum breakdown voltage 500 V 500 V 500 V 500 V
Processing package description ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3 ROHS COMPLIANT, DPAK-3
Lead-free Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal location SINGLE SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 5 A 5 A 5 A 5 A
Rated avalanche energy 130 mJ 130 mJ 130 mJ 130 mJ
Maximum drain on-resistance 1.7 ohm 1.7 ohm 1.7 ohm 1.7 ohm
Maximum leakage current pulse 20 A 20 A 20 A 20 A

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