|
IRFR430A |
IRFU430A |
Description |
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 |
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 |
Is it Rohs certified? |
incompatible |
incompatible |
Maker |
Fairchild |
Fairchild |
package instruction |
SMALL OUTLINE, R-PSSO-G2 |
IN-LINE, R-PSIP-T3 |
Contacts |
3 |
3 |
Reach Compliance Code |
unknown |
unknown |
Avalanche Energy Efficiency Rating (Eas) |
340 mJ |
340 mJ |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
500 V |
500 V |
Maximum drain current (Abs) (ID) |
3.5 A |
3.5 A |
Maximum drain current (ID) |
3.5 A |
3.5 A |
Maximum drain-source on-resistance |
1.5 Ω |
1.5 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JESD-30 code |
R-PSSO-G2 |
R-PSIP-T3 |
JESD-609 code |
e0 |
e0 |
Number of components |
1 |
1 |
Number of terminals |
2 |
3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
150 °C |
150 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
IN-LINE |
Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
48 W |
48 W |
Maximum pulsed drain current (IDM) |
14 A |
14 A |
Certification status |
Not Qualified |
Not Qualified |
surface mount |
YES |
NO |
Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Terminal form |
GULL WING |
THROUGH-HOLE |
Terminal location |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
transistor applications |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |