IRFR430ATR datasheet, PDF - EEWORLD Datasheet

IRFR430ATR: DescriptionMOSFET N-Chan 500V 5.0 Amp; CategoryDiscrete semiconductor The transistor; File Size244KB，11 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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MOSFET N-Chan 500V 5.0 Amp

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
Parts packaging code	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	130 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	5 A
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	1.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	110 W
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	IRFR430ATR	IRFR430ATRLPBF
Description	MOSFET N-Chan 500V 5.0 Amp	MOSFET N-Chan 500V 5.0 Amp
Is it Rohs certified?	incompatible	conform to
Parts packaging code	TO-252AA	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3
Reach Compliance Code	unknown	not_compliant
Avalanche Energy Efficiency Rating (Eas)	130 mJ	130 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (Abs) (ID)	5 A	5 A
Maximum drain current (ID)	5 A	5 A
Maximum drain-source on-resistance	1.7 Ω	1.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e0	e3
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	110 W	110 W
Maximum pulsed drain current (IDM)	20 A	20 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN LEAD	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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