MOSFET N-Chan 500V 5.0 Amp
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Vishay |
| Parts packaging code | TO-252AA |
| package instruction | DPAK-3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 130 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V |
| Maximum drain current (Abs) (ID) | 5 A |
| Maximum drain current (ID) | 5 A |
| Maximum drain-source on-resistance | 1.7 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252AA |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 110 W |
| Maximum pulsed drain current (IDM) | 20 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IRFR430A | IRFR430ATRPBF | |
|---|---|---|
| Description | MOSFET N-Chan 500V 5.0 Amp | MOSFET N-Chan 500V 5.0 Amp |
| Is it Rohs certified? | incompatible | conform to |
| Parts packaging code | TO-252AA | TO-252AA |
| package instruction | DPAK-3 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | compliant |
| Avalanche Energy Efficiency Rating (Eas) | 130 mJ | 130 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V | 500 V |
| Maximum drain current (Abs) (ID) | 5 A | 5 A |
| Maximum drain current (ID) | 5 A | 5 A |
| Maximum drain-source on-resistance | 1.7 Ω | 1.7 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252AA | TO-252AA |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 code | e0 | e3 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 110 W | 110 W |
| Maximum pulsed drain current (IDM) | 20 A | 20 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | TIN LEAD | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | 30 |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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