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UMW5N65F

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 5A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2Ω @ 2.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,9 Pages
ManufacturerUMW(Guangdong Youtai Semiconductor Co., Ltd.)
Websitehttp://www.umw-ic.com/

UMW is a leading provider of LDOs, MOSFETs, DC/DC, RS-232, RS-485, ESD/TVS, optocouplers, logic circuits, temperature sensor from mainland China. UTD's solutions enable low-risk development, lower overall system cost, and faster time-to-market for a variety of global applications.

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UMW5N65F Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 5A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2Ω @ 2.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W(Tc) Type: N-channel

UMW5N65F Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C5A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance2Ω @ 2.5A,10V
Maximum power dissipation (Ta=25°C)50W(Tc)
typeN channel

UMW5N65F Preview

Download Datasheet
UMW
R
UMW 5N65
N-
N-沟道功率 MOS
TC=25
TC=25°
●最大额定值(TC=25
°
C
Ratings(
Absolute Maximum Ratings
Tc=25
°
C
参数
PARAMETER
漏-源电压
Drain-source Voltage
栅-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25℃
漏极电流
Continuous Drain Current
TC=100℃
最大脉冲电流
Drain Current
-Pulsed
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩½量
Single Pulse Avalanche Energy
符号
SYMBOL
V
DS
V
GS
I
D
I
D
I
DM
额定值
VALUE
650
±30
5.0
3.15
20
TO-220:120
P
tot
TO-220/220FP/262/263
TO-220/220FP/262/263
单½
UNIT
V
V
V
DS
=650V
=2.0Ω
R
DS(ON)
=2.0Ω
I
D
=5.0A
A
A
A
TO-220FP:50
TO-262/263:120
W
Tj
T
STG
E
AS
150
-55-150
210
°C
°C
mJ
Tc=25
●电特性(Tc=25
°
C
Electronic Characteristics
Tc=25 C
Characteristics(
°
参数
PARAMETER
漏-源击穿电压
Drain-source Breakdown Voltage
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
漏-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
符号
SYMBOL
BV
DSS
ΔBV
DSS/
ΔTj
V
GS(TH)
测试条件
TEST CONDITION
V
GS
=0V, I
D
=250µA
I
D
=250uA, Referenced to
25°C
V
GS
=V
DS,
I
D
=250µA
V
DS
=650V,
V
GS
=0V, Tj=25°C
V
DS
=480V,
V
GS
=0V, Tj=125°C
V
DS
=40V, I
D
=2.5A
4.0
2.0
最小值
MIN
典型值
TYP
650
0.6
4.0
10
100
最大值
MAX
单½
UNIT
V
V/°C
V
µA
µA
S
I
DSS
gfs
www.umw-ic.com
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