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SS24G

Description
DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 2A Forward voltage drop (Vf): 550mV @ 2A 40V 2A VF=0.55@2A
CategoryDiscrete semiconductor    Schottky diode   
File Size1MB,3 Pages
ManufacturerSHIKUES
Websitehttp://www.shike.tw
Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.
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SS24G Overview

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 2A Forward voltage drop (Vf): 550mV @ 2A 40V 2A VF=0.55@2A

SS24G Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)40V
Average rectified current (Io)2A
Forward voltage drop (Vf)550mV @ 2A

SS24G Preview

Download Datasheet
SS22G THRU SS220G
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V Forward Current - 2.0A
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMA
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 60mg / 0.0021oz
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS22G
SS24G
SS26G
SS28G
SS210G
SS212G
SS215G
SS220G
Units
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Top View
Marking Code: SS22~SS220
Simplified outline SMA and symbol
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
40
28
40
60
42
60
80
56
80
2.0
100
70
100
120
84
120
150
105
150
200
140
200
V
V
V
A
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I
FSM
50
40
A
Max Instantaneous Forward Voltage at 2 A
V
F
0.55
0.5
5
220
0.70
0.85
0.3
3
80
80
-55 ~ +125
-55 ~ +150
0.95
V
Maximum DC Reverse Current
at Rated DC Reverse Voltage
T
a
= 25°C
T
a
=100°C
I
R
C
j
R
θJA
T
j
T
stg
mA
pF
°C/W
Typical Junction Capacitance
(1)
Typical Thermal Resistance
(2)
Operating Junction Temperature Range
°C
°C
Storage Temperature Range
(1)
Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
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