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SMBJ12A

Description
Polarity: Unidirectional Peak pulse current (10/1000us): 30.2A Clamping voltage: 19.9V Breakdown voltage (minimum): 13.3V Reverse shutdown voltage (typ.): 12V VRWM=12V, Vc=19.9V ,Ipp=30.2A unidirectional
CategoryDiscrete semiconductor    TVS diode   
File Size3MB,5 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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SMBJ12A Overview

Polarity: Unidirectional Peak pulse current (10/1000us): 30.2A Clamping voltage: 19.9V Breakdown voltage (minimum): 13.3V Reverse shutdown voltage (typ.): 12V VRWM=12V, Vc=19.9V ,Ipp=30.2A unidirectional

SMBJ12A Parametric

Parameter NameAttribute value
polarityUnidirectional
Peak pulse current (10/1000us)30.2A
clamping voltage19.9V
Breakdown voltage (minimum value)13.3V
Reverse shutdown voltage (typ)12V

SMBJ12A Preview

Download Datasheet
SMBJ5.0 THRU SMBJ440CA
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Stand-off Voltage: 5.0-440 Volts
Peak pulse power: 600 Watts
SMB/DO-214AA
FEATURE
For surface mounted applications in order to optimize board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Excellent clamping capability
600W peak pulse power capability at 10/1000μs waveform,
repetition rate (duty cycle): 0.01%
Fast response time
Typical I
R
less than 1μA above 10V
High Temperature soldering: 260
/10 seconds at terminals
Plastic package has underwriters laboratory flammability 94V-0
0.087 (2.20)
0.071 (1.80)
0.155(3.94)
0.130(3.30)
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.084(2.13)
0.060(1.52)
0.030(0.76)
MECHANICAL DATA
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Dimensions in inches and (millimeters)
Case: JEDEC DO-214AA. Molded plastic over glass passivated junction
Terminal: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes cathode except bi-directional models
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.10g
APPLICATIONS
I/O interface
AC/DC power supply
Low frequency signal transmission line (RS232, RS485, etc.)
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Peak pulse power dissipation at 10/1000μs waveform
(Note1, Note2, Fig.1)
Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3)
Steady state power dissipation at T
A
=50℃ (Fig.5)
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load, (JEDEC Method) (Note3, Fig.6)
Operating junction and Storage Temperature Range.
Typical thermal resistance junction to lead
Typical thermal resistance junction to ambient
P
PPM
I
PPM
P
M(AV)
I
FSM
T
J
,T
STG
R
θJL
R
θJA
Minimum 600
See Table
5.0
100
-65 to +150
20
100
Watts
Amps
Watts
Amps
℃/W
℃/W
Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig.2.
2. Mounted on 5.0mm×5.0mm (0.03mm thick) copper pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, duty cycle=4 pulses per minutes maximum.
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