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SEC143ZG

Description
50V 100mA digital transistor
CategoryDiscrete semiconductor   
File Size196KB,4 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SEC143ZG Overview

50V 100mA digital transistor

Features

Product Name: 50V 100mA Digital Transistor


Product model:SEC143ZG


Product Description:


1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).


2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.


3. Only the on / off conditions need to be set foroperation, making the device design easy.


application:


Inverter, Interface, Driver


Construction:


NPN epitaxial planar silicon transistor (Resistor built-in type)


Package:


TODAY-723


replacement product:


Rohm DTC143ZMT2L


SEC143ZG Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SEC143ZG
100mA / 50V Digital transistors
Features
Built-in bias resistors enable the configuration
of an inverter circuit without connecting external
input resistors (see the equivalent circuit).
The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing of
the input. They also have the advantage of almost
completely eliminating parasitic effects.
Only the on / off conditions need to be set for
operation, making the device design easy.
Revision:A
Applications
Inverter, Interface, Driver
Construction
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
CC
V
IN
I
O
I
C(MAX)
P
D
T
J
Tstg
R
θJA
50
-5 to +12
100
100
200
150
-55 to +150
83
V
V
mA
mW
/W
Thermal Characteristics
Thermal Resistance,Junction-to-Ambient (Note 2)
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Conditions
Min..
Typ.
Max.
Unit
V
I(off)
Input voltage
VI(on)
VCC=5V, IO=100A
VO=0.3V, IO=5mA
-
1.3
-
-
0.5
-
V
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