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SE30P12D

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 12A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 15mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 2W Type: P-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size362KB,5 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE30P12D Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 12A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 15mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 2W Type: P-channel

SE30P12D Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C12A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance15mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)2W
typeP channel

SE30P12D Preview

Download Datasheet
SE30P12D
P-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and low
operation voltage. This device is suitable for
using as a load switch or in PWM applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
V
DS
= -30V
R
DS(ON)
= 11.5mΩ @ V
GS
=-10V
R
DS(ON)
= 18mΩ @ V
GS
=-4.5V
Pin configurations
See Diagram below
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
-30
±20
-12
-50
2
-55 to 150
Units
V
V
A
W
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
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