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SE150110G

Description
Drain-source voltage (Vdss): 150V Continuous drain current (Id) (at 25°C): 110A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 7.8mΩ @ 55A, 10V Maximum power dissipation (Ta =25°C): 300W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size491KB,9 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE150110G Overview

Drain-source voltage (Vdss): 150V Continuous drain current (Id) (at 25°C): 110A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 7.8mΩ @ 55A, 10V Maximum power dissipation (Ta =25°C): 300W Type: N-channel

SE150110G Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)150V
Continuous drain current (Id) at 25°C110A
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance7.8mΩ @ 55A,10V
Maximum power dissipation (Ta=25°C)300W
typeN channel

SE150110G Preview

Download Datasheet
SE150110G
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and
low operation voltage. This device is
suitable for using as a load switch or in
PWM applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Pin configurations
See Diagram below
Features
For a single MOSFET
V
DS
= 150V
R
DS(ON)
= 6mΩ @ V
GS
=10V
TO-263
TO-247
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
Rating
150
±20
110
440
1296
300
-55 to 175
Units
V
V
A
mJ
W
Single pulse avalanche energy
Total Power Dissipation
@TA=25℃
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
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