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SB820_09

Description
8 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size59KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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8 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AC

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SB820~SB860
D
2
PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
.058(1.47)
.042(1.07)
20 to 60 Volts
CURRENT
8 Ampere
MECHANICALDATA
• Case: TO-220AC molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
Ma xi m um Re c urr e nt P e a k Re ve rs e Vo lta g e
Ma xi m um RMS Vo lta g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve ra g e F o r wa rd C urr e nt a t Tc = 7 5
O
C
P e a k F o rwa rd S urg e C urre nt :8 .3 ms s i ng le ha lf s i ne -
wa ve s up e r i m p o s e d o n ra te d lo a d (J E D E C m e tho d )
Ma xi m um F o r wa rd Vo lta g e a t 8 .0 A
Ma xi m um D C Re ve rs e C urr e nt T
J
= 2 5
O
C
a t Ra te d D C B lo c k i ng Vo lta g e T
J
= 1 0 0
O
C
Typ i c a l The rm a l Re s i s ta nc e
Op e r a ti ng J unc ti o n Te m p e ra ture Ra ng e
S to r a g e Te m p e r a ture Ra ng e
S YM B OL S B 8 2 0
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θJ
C
T
J
T
S TG
20
14
20
SB830
30
21
30
SB840
40
28
40
8
SB845
45
3 1 .5
45
SB850
50
35
50
SB860
60
42
60
UNITS
V
V
V
A
A
150
0 .5 5
0 .2
50
4
- 5 5 to + 1 2 5
- 5 5 to + 1 5 0
- 5 5 to + 1 5 0
0 .1
50
O
0 .7 5
V
mA
C / W
O
C
C
O
NOTES:
Both Bonding and Chip structure are available.
STAD-DEC.02.2009
1
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