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PJQ1900

Description
20V N-Channel Enhancement Mode MOSFET
File Size328KB,7 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJQ1900 Overview

20V N-Channel Enhancement Mode MOSFET

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PPJQ1900
20V N-Channel Enhancement Mode MOSFET
Voltage
Features
20 V
Current
1.2 A
DFN 3L
Unit: inch(mm)
Low Voltage Drive (1.2V).
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN 3L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00004 ounces, 0.0011 grams
Marking: 0
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current, tp<10us
Power Dissipation
T
A
=25
o
C
Derate above 25
o
C
T
A
=25
o
C
T
sp
=25
o
C
(Note 3)
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
A
A
mW
mW/
o
C
o
20
+10
1.2
2.0
4.0
900
7.2
-55~150
139
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient, t<10s
(Note 4)
C
C/W
August 28,2015-REV.00
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