PJD5NA80_L2_00001 datasheet, PDF

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PJD5NA80_L2_00001: DescriptionPower Field-Effect Transistor, 5A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,; CategoryThe transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJD5NA80_L2_00001 Overview

Power Field-Effect Transistor, 5A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

PJD5NA80_L2_00001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	323 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	2.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	20 A
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PPJU5NA80

/ PJD5NA80 / PJP5NA80 / PJF5NA80

800V N-Channel MOSFET

Voltage

Features



DS(ON)

, V

@10V,I

@ 2.5A<2.7Ω



High switching speed



Improved dv/dt capability



Low Gate Charge



Low reverse transfer capacitance



Lead free in compliance with EU RoHS 2011/65/EU directive.



Green molding compound as per IEC61249 Std.

TO-252AA

TO-251AA

ITO-220AB-F

TO-220AB

800 V

Current

(Halogen Free)

Mechanical Data



Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package



Terminals : Solderable per MIL-STD-750, Method 2026



TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams



TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams



TO-220AB Approx. Weight : 0.067 ounces, 2 grams



ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy

(Note 1)

Power Dissipation

=25

Derate above 25

SYMBOL

140

1.12

146

1.17

-55~150

TO-251AA

TO-220AB

ITO-220AB-F

TO-252AA

UNITS

800

+30

323

0.38

140

1.12

Operating Junction and

Storage Temperature Range

Typical Thermal resistance

Junction to Case

Junction to Ambient

STG

θJC

θJA

0.89

110

0.86

62.5

2.6

120

0.89

110

C/W



Limited only By Maximum Junction Temperature

March 10,2014-REV.00

Page 1

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