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PESD5V0U1BL-N

Description
Reverse shutdown voltage (typ): 5V Breakdown voltage (min): 5.5V Polarity: Bidirectional Clamping voltage: 12V Peak pulse current (10/1000us): 3A (8/20us)
CategoryDiscrete semiconductor    ESD diode   
File Size486KB,4 Pages
ManufacturerBORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.
Websitehttp://www.born-tw.com/
BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.
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PESD5V0U1BL-N Overview

Reverse shutdown voltage (typ): 5V Breakdown voltage (min): 5.5V Polarity: Bidirectional Clamping voltage: 12V Peak pulse current (10/1000us): 3A (8/20us)

PESD5V0U1BL-N Parametric

Parameter NameAttribute value
Reverse shutdown voltage (typ)5V
Breakdown voltage (minimum value)5.5V
polarityBidirectional
clamping voltage12V
Peak pulse current (10/1000us)3A (8/20us)

PESD5V0U1BL-N Preview

Download Datasheet
PESD5V0U1BL-N
ESD Protection Diode
»
Features
40Watts peak pulse power (tp = 8/20μs)
Tiny DFN1006 package
Bidirectional configurations
Solid-state silicon-avalanche technology
Low clamping voltage
Low leakage current
Low capacitance (Cj=2.7pF typ.)
Protection one data/power line
IEC 61000-4-2 ±10kV contact ±15kV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 3.0A (8/20μs)
»
Applications
»
Mechanical Data
Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
DFN1006 package
Molding compound flammability rating: UL 94V-0
Packaging: Tape and Reel
RoHS/WEEE Compliant
»
Schematic & PIN Configuration
DFN1006
Revision 2018
www.born-tw.com
1/4
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