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MMBT2222AWT/R7

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBT2222AWT/R7 Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

MMBT2222AWT/R7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)285 ns
Maximum opening time (tons)35 ns

MMBT2222AWT/R7 Preview

Download Datasheet
MMBT2222AW
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = 600mA
0.087(2.20)
0.070(1.80)
40 Volts
POWER
150 mWatts
SOT-323
Unit
inch(mm)
0.004(0.10)MIN.
0.044(1.10)
0.035(0.90)
0.054(1.35)
0.045(1.15)
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Apporx. Weight: 0.0001 ounce, 0.005 gram
• Marking: M2A
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.004(0.10)MAX.
0.016(0.40)
0.008(0.20)
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
75
6.0
600
Units
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
TOT
R
θJA
T
J
T
STG
Value
150
830
-55 to 150
-55 to 150
Units
mW
O
0.087(2.20)
0.078(2.00)
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
May 13.2010-REV.00
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