EEWORLDEEWORLDEEWORLD

Part Number

Search

MMBD352WT/R7

Description
Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

MMBD352WT/R7 Overview

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

MMBD352WT/R7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance1 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

MMBD352WT/R7 Preview

Download Datasheet
MMBD101W/MMBD352W/MMBD354W/MMBD355W
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
VOLTAGE
FEATURES
• Low Capacitance,Minimizing Insertion Losses in VHF Applications
• Low V
F
: 0.5V (Typ) at I
F
=10mA
• Extremely Fast Switching Speed
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
7.0 Volts
POWER
200 mW
MECHANICAL DATA
Case : SOT-323, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Approx weight : 0.0002 ounces, 0.005 grams
MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
PAR AME T E R
Ma rk i ng C o d e
Re ve rs e Vo lta g e
F o rwa rd P o we r D i ss i p a ti o n
J unc ti o n Te mp e ra tur e Ra ng e
S to r a g e Te mp e ra tur e Ra ng e
C i rc ui t F i g ure
V
R
P
F
T
J
T
S TG
S INGL E
S YMB OL
MMB D 1 0 1 W
101
MMB D 3 5 2 W
352
7
200
- 5 5 to 1 2 5
- 5 5 to 1 5 0
S E RIE S
C OMMON
C ATHOD E
C OMMON
A NOD E
MMB D 3 5 4 W
354
MMB D 3 5 5 W
355
V
mW
O
o
U N IT S
C
C
O
THERMAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
PAR AM E T E R
The r m a l Re s i s ta nc e , J unc ti o n t o A m b i e nt
(1)
o
S YM B OL
R
Θ
JA
VAL U E
500
U N IT S
O
C /W
Note 1. FR-5 Board = 1.0 x 0.75 x 0.062 in
SINGLE
SERIES
COMMON CATHODE
COMMON ANODE
March 30,2012-REV.01
PAGE . 1
LSM6DS3 3D Accelerometer and 3D Gyroscope PCB Package and Code
The LSM6DS3 3D accelerometer and 3D gyroscope are system-in-packages that operate in 1.25mA (up to 1.6kHz ODR) high-performance mode. It features always-on low power consumption to provide you with th...
littleshrimp MEMS sensors
cubemx sets TF to 4bit, but the file shows 1bit mode
Cube MX 5.30 is the latest version. When reading and writing TF cards via SDIO, the mode is set to 4-bit. However, the generated c file is always in 1-bit mode. It's strange. Could it be that the 4-bi...
kangkls stm32/stm8
How to choose the inductor of BOOST boost power supply?
How should I choose the inductor for a BOOST boost power supply? Can anyone tell me? ? ? ?Xiaobai's confused face... Please help~~~~...
他们逼我做卧底 Power technology
"Invite you to disassemble" Episode 1 --- Xiaomi 45W charging head disassembly
Preface: Recently, EE held a disassembly expert event. The first episode was the disassembly of the charging head. I happened to be keen on disassembly, so I participated in this event. I don’t know m...
tagetage Power technology
The experience of debugging L-band RF power amplifier is in "2019.1.1" for your reference
This is the details of debugging the RF amplifier that I personally tested in my project, system solution - structural design - module determination - layout - module verification - whole machine veri...
btty038 RF/Wirelessly
2021 ON Semiconductor Avnet RSL10 Bluetooth SoC Development and Design Competition 4th Post (Bluetooth Current)
Because the project specifically requires that the power consumption of the Bluetooth transmission circuit should be less than 3.5mA , if it exceeds 3.5mA , the project cannot continue. This time, a c...
7905 onsemi and Avnet IoT Innovation Design Competition

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号