MJD42C datasheet, PDF - EEWORLD Datasheet

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MJD42C: DescriptionPNP transistor; CategoryDiscrete semiconductor; File Size246KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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MJD42C Overview

PNP transistor

Features

Product Name: PNP Transistor

Product model: MJD42C

Product parameters:

Pcm (maximum power dissipation): 1250mW

Ic (collector current): 6000mA

BVcbo (collector-base breakdown voltage): 100V

BVceo (Collector-Emitter Breakdown Voltage): 100V

BVebo (emitter-base breakdown voltage): 5V

hFE (current gain): Min: 15, Max: 75

VCE (sat) saturation voltage drop: 1.5V

fT (transition frequency): 3MHz

Package: TO-251-3L

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251-3L Plastic-Encapsulate Transistors

MJD42C

TO-251-3L

TRANSISTOR (PNP)

FEATURES

Designed for

General Purpose Amplifier

and

Low Speed

Switching Applications.

Lead Formed for Surface Mount Applications in Plastic

Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP41 and TIP42 Series

Monolithic Construction With Built–in Base–Emitter Resistors

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-100

-5

-6

1.25

150

-65-150

Unit

℃

BASE

COLLECTOR

EMITTER

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

FE(2)

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

CE(sat)

=-4V,I

=-3A

=-6A,I

=-0.6A

=-4V,I

=-6A

=-10V,I

=-500mA,f=1MHz

-1.5

-2

MHz

Symbol

(BR)CBO

CEO(sus)

(BR)EBO

CEO

EBO

FE(1)

Test conditions

=-100μA,I

=-30mA,I

=-100μA,I

=-60V,I

=-5V I

=-4V I

=-0.3A

Min

-100

-5

-50

-0.5

Typ

Max

Unit

μA

B,Jan,2012

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