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MBR20200FCT_T0_00001

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR20200FCT_T0_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

MBR20200FCT_T0_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PSFM-T3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage200 V
Maximum reverse current50 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

MBR20200FCT_T0_00001 Preview

Download Datasheet
MBR2040FCT SERIES
20 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
0.134(3.4)
0.118(3.0)
0.272(6.9)
0.248(6.3)
40 to 200 Volts
CURRENT
20 Amperes
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Lead free in comply with EU RoHS 2011/65/EU directives
0.112(2.85)
0.100(2.55)
0.406(10.3)
0.381(9.7)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.606(15.4)
0.583(14.8)
MECHANICAL DATA
• Case: ITO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RAME TE R
Maxi mum Recurre nt P eak Re verse Voltage
Maxi mum RM S V oltage
Maxi mum D C B lo cki ng V oltage
Maxi mum A ve ra ge F orward C urrent
(S ee fi g .1)
Pea k F orward S urg e C urrent : 8.3ms si ngle
half s i ne-wa ve s uperi mposed on ra te d load
(J ED E C method)
Maxi mum F o rward Voltage at 10A , pe r leg
Maxi mum D C Re verse C urre nt T
J
=25
O
C
at Rated D C Blo cki ng Voltage T
J
=125
O
C
Typi ca l The rmal R es i s tance
Ope ra ting and S torage J unc ti o n
Temperature Range
SYMB OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θJ
C
T
J
,T
S TG
MB R2040FC T MB R2045F C T MB R2050F C T MB R2060F C T MB R208 0FC T MB R2090FC T MB R20100FC T MB R20150F C T MB R20200 FC T
UNITS
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
20
200
90
63
90
10 0
70
10 0
1 50
1 05
1 50
20 0
140
20 0
0.7
0.75
0.0 5
20
2
0.8
0.9
V
mA
O
C / W
O
-55 to + 150
-65 to +175
C
Notes :
Both Bonding and Chip structure are available.
April 22,2011-REV.04
PAGE . 1
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