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LL5818F1

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size511KB,3 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
Download Datasheet Parametric View All

LL5818F1 Overview

Rectifier Diode,

LL5818F1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionO-XELF-R2
Reach Compliance Codeunknown
Is SamacsysN
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeDO-213AB
JESD-30 codeO-XELF-R2
Maximum non-repetitive peak forward current25 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
Maximum reverse current1000 µA
surface mountYES
technologySCHOTTKY
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

LL5818F1 Preview

Download Datasheet
LL5817 THRU LL5819
Schottky Rectifier
DO-213AB(MELF)
.022(0.56)
.018(0.46)
Solderable Ends
RoHS
COMPLIANT
Mounting Pad Layout
0.079(2.0)
.102(2.60)
.087(2.20)
.106(2.70)
.090(2.30)
0.197(5.0)
0.118(3.0)
Features
I
o
1.0A
VRRM 20V-40V
High surge current capability
Applications
● Rectifier
.205(5.20)
.185(4.70)
Dimensions in inches and (millimeters)
Limiting Values (Absolute Maximum Rating)
Item
Repetitive
Voltage
Peak
Reverse
Symbol
V
RRM
Unit
V
Conditions
17
20
LL58
18
30
19
40
Average Forward Current
I
F(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=80℃
1.0
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I
FSM
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
25
T
J
T
STG
-55~+125
-55 ~ +150
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Peak Forward
Voltage
Peak Reverse
Current
Thermal
Resistance(Typic
al)
Symbol
V
FM
I
RRM1
I
RRM2
R
θJ-A
Unit
V
Test Condition
I
FM
=1.0A
Ta=25℃
Ta=125℃
Max
LL58
17
0.45
18
0.55
1.0
10
80
19
0.6
mA
℃/W
V
RM
=V
RRM
Between junction and ambient
1/3
S-S549
Rev. 2.0,10-Aug-15
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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