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IRLML6401

Description
Drain-source voltage (Vdss): 16V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 110mΩ @ 3A, 4.5V Maximum power dissipation ( Ta=25°C): - Type: P-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size250KB,4 Pages
ManufacturerSHIKUES
Websitehttp://www.shike.tw
Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.
Download Datasheet Parametric View All

IRLML6401 Overview

Drain-source voltage (Vdss): 16V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 110mΩ @ 3A, 4.5V Maximum power dissipation ( Ta=25°C): - Type: P-channel

IRLML6401 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)16V
Continuous drain current (Id) at 25°C3A
Gate-source threshold voltage1.5V @ 250uA
Drain-source on-resistance110mΩ @ 3A,4.5V
Maximum power dissipation (Ta=25°C)-
typeP channel

IRLML6401 Preview

Download Datasheet
IRLML6401
P-Channel Enhancement Mode MOSFET
Feature
-16V/-3A, R
DS(ON)
= 110mΩ(MAX) @V
GS
= -4.5V.
R
DS(ON)
= 140mΩ(MAX) @V
GS
= -2.5V.
Super High dense cell design for extremely low R
DS(ON)
Reliable and Rugged
SOT-23 for Surface Mount Package
SOT-23
Applications
Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
T
A
=25
Unless Otherwise noted
Symbol
V
DS
V
GS
I
D
Limit
-16
±8
-3
Units
V
V
A
Electrical Characteristics
Parameter
Off Characteristics
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
T
A
=25
Unless Otherwise noted
Symbol
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(ON)
Test Conditions
VGS=0V, ID=-250μA
VDS=-12V, VGS=0V
VGS=8 V, VDS=0V
VGS=-8 V, VDS=0V
VGS= VDS, ID=-250µA
VGS =-4.5V, ID =-3.0A
VGS =-2.5V, ID =-2.0A
VGS =0V, IS=-1.25A
Min
-16
-
-
-
-0.45
-
-
Typ.
-
-
-
-
-
--
--
Max
-
-5
100
-100
-1.5
110
140
-1.8
Units
V
μA
nA
nA
V
V
On Characteristics
Gate Threshold Voltage
Static Drain-source
On-Resistance
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
REV.08
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