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HMBT3906

Description
-40V -0.2A PNP epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size39KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HMBT3906 Overview

-40V -0.2A PNP epitaxial planar transistor

Features

Product Name: -40V -0.2A PNP Epitaxial Planar Transistor


Product model: HMBT3906


Product Description:


The HMBT3906 is designed for general purpose switching and amplifier applications.




parameter:


Type: PNP


BVCEO: -40V


IC: -0.2A


PD: 0.225W


hFE: MIN 100


hFE: Max. 300


VCE(sat): Max.-0.25V


RoHS: PF(lead-free), HF(halogen-free)


Package: SOT-23


HMBT3906 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6820
Issued Date : 1993.06.30
Revised Date : 2004.08.17
Page No. : 1/4
HMBT3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT3906 is designed for general purpose switching and amplifier
applications.
SOT-23
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C)............................................................................................................... 225 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage .......................................................................................................................... -40 V
V
CEO
Collector to Emitter Voltage....................................................................................................................... -40 V
V
EBO
Emitter to Base Voltage ............................................................................................................................... -5 V
I
C
Collector Current ....................................................................................................................................... -200 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)1
*V
BE(sat)2
*h
FE1
*h
FE2
*h
FE3
*h
FE4
*h
FE5
f
T
Cob
Min.
-40
-40
-5
-
-
-
-0.65
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-0.2
-
-0.84
-
-
-
-
-
-
-
Max.
-
-
-
-50
-0.25
-0.4
-0.85
-0.95
-
-
300
-
-
-
4.5
MHz
pF
Unit
V
V
V
nA
V
V
V
V
I
C
=-10uA
I
C
=-1mA
I
C
=-10uA
V
CE
=-30V, V
BE
=-3V
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-1V, I
C
=-0.1mA
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-50mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-20V, I
C
=-10mA, f=100MHz
V
CB
=-5V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HMBT3906
HSMC Product Specification
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