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G06N10

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 240mΩ @ 6A, 10V Maximum power dissipation (Ta= 25°C): 25W Type: N-channel N tube, 100V, 6A, turn on 2.0V, 195mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,5 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
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G06N10 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 240mΩ @ 6A, 10V Maximum power dissipation (Ta= 25°C): 25W Type: N-channel N tube, 100V, 6A, turn on 2.0V, 195mΩ@10V

G06N10 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C6A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance240mΩ @ 6A,10V
Maximum power dissipation (Ta=25°C)25W
typeN channel

G06N10 Preview

Download Datasheet
GOFORD
Description
The G06N10 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
G06N10
D
G
General Features
S
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Power switching application
LED lighting
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
unless
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
100
±20
6
20
25
-55 To 175
Unit
V
V
A
A
W
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
6
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=100V,V
GS
=0V
100
-
112
-
-
1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
HTTP://www.gofordsemi.com
TEL:0755-29961262
FAX
:0755-29961466
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