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FR2D-AU_R1_100A1

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size186KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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FR2D-AU_R1_100A1 Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

FR2D-AU_R1_100A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMB, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101; TS 16949
Maximum repetitive peak reverse voltage200 V
Maximum reverse current1 µA
Maximum reverse recovery time0.15 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

FR2D-AU_R1_100A1 Preview

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FR2A-AU~FR2J-AU
SURFACE MOUNT FAST RECOVERY RECTIFIER
VOLTAGE
50 to 600 Volts
CURRENT
2 Ampere
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Fast Recovery times for high efficiency
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Glass passivated junction
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in comply with EU RoHS 2002/95/EC directives
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
0.185(4.70)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.0032 ounce, 0.092 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA ME TE R
M a xi mum Re c urre nt P e a k Re ve rs e Vo lta g e
M a xi mum RMS V o lta g e
M a xi mum D C B lo c k i ng Vo lta g e
M a xi mum A ve ra g e Re c ti fi e d C urre nt a t T
L
=9 0
O
C
P e a k F o rwa rd S urg e C urre nt : 8 .3 ms s i ng le ha lf s i ne -wa ve
s up e ri mp o s e d o n r a te d lo a d ( J E D E C me tho d )
M a xi mum F o r wa rd Vo lta g e a t 2 A
M a xi mum D C Re ve rs e C urre nt T
J
=2 5
O
C
a t Ra te d D C B lo c k i ng Vo lta g e T
J
=1 2 5
O
C
M a xi mum R e ve rs e R e c o ve ry Ti m e (No te 1 )
M a xi mum J unc ti o n C a p a c i ta nc e ( No te 2 )
Typ i c a l J unc ti o n Re s i s ta nc e (No te 3 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
S YMB OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
t
rr
C
J
R
θJ
L
T
J
,T
S TG
F R2 A -A U F R2 B -A U
50
35
50
100
70
100
F R2 D -A U
200
140
200
2
50
1 .3
1
150
F R2 G-A U F R2 J -A U
400
280
400
600
420
600
UNITS
V
V
V
A
A
V
μ
A
150
40
20
-5 0 t o +1 5 0
250
ns
pF
O
C / W
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1 MHz and applied V
r
= 4.0 volts.
3. 8.0 mm
2
( .013mm thick ) land areas.
STAD-MAR.03.2009
1
PAGE . 1
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