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ES3CBG

Description
DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 3A Forward voltage drop (Vf): 1V @ 3A Reverse recovery time (trr): 35ns
CategoryDiscrete semiconductor    Super fast recovery diode   
File Size364KB,3 Pages
ManufacturerSHIKUES
Websitehttp://www.shike.tw
Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.
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ES3CBG Overview

DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 3A Forward voltage drop (Vf): 1V @ 3A Reverse recovery time (trr): 35ns

ES3CBG Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)150V
Average rectified current (Io)3A
Forward voltage drop (Vf)1V @ 3A
Reverse recovery time (trr)35ns

ES3CBG Preview

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ES3ABG THRU ES3JBG
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V Forward Current –3 A
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case : SMB
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight :
0.055g / 0.002oz
Absolute Maximum Ratings and Characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
Top View
Marking Code: ES3A~ES3J
Simplified outline SMB and symbol
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
ES3AB
G
ES3BB ES3CB
G
G
ES3DB
G
ES3EB
G
ES3GB
G
ES3JB
G
Units
V
V
V
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
c
= 100
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Forward Voltage at 3 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
at V
R
=4V, f=1MHz
(1)
3
A
A
1.25
1.68
V
I
FSM
90
V
F
T
a
= 25
°C
T
a
=125
°C
1
5
100
45
I
R
μA
C
j
pF
Maximum Reverse Recovery Time
t
rr
R
θJA
R
θJC
T
j
, T
stg
35
50
16
-55 ~ +150
ns
Typical Thermal Resistance
(2)
°C/W
°C
Operating and Storage Temperature Range
(1)Measured
with I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A .
(2)
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
REV.08
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