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DI150S_10

Description
1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size79KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

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DI150S~DI1510S
SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE
50 to 1000 Volts
CURRENT
1.5 Amperes
Recongnized File #E111753
FEATURES
• Plastic material used carries Underwriters Laboratory recognition 94V-O
• Low leakage
• Surge overload rating-- 50 amperes peak
• Ideal for printed circuit board
• Exceeds environmental standards of MIL-S-19500/228
• In compliance with EU RoHS 2002/95/EC directives
406
10.3
MECHANICAL DATA
0.098(2.5)
0.086(2.2)
Case: Reliable low cost construction utilizing molded plastic technique results in
inexpensive product
Terminals: Lead solderable per MIL-STD-750, Method 2026
Polarity: Polarity symbols molded or marking on body
Mounting Position: Any
Weight: 0.0105 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a x i m u m R M S B r i d g e In p u t V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt TA = 4 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
I
2
t R a t i n g f o r f u s i n g ( t < 8 . 3 5 m s )
M a xi m um F o r w a r d V o l t a g e D r o p p e r B r i d g e E l e m e nt
a t 1 .0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 2 5
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
Ty p i c a l t h e r m a l r e s i s t a n c e p e r l e g ( ( N o t e 2 )
O p e r a t i n g a n d S t o r a g e Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
NOTES:
S YM B O L
V
RRM
V
RMS
V
DC
I
AV
I
F S M
I
2
t
V
F
I
R
C
J
J A
J L
T
J
TA
D I1 5 0 S
50
35
50
D I1 5 1 S
100
70
100
D I1 5 2 S
200
140
200
D I1 5 4 S
400
280
400
1 .5
50
10
1 .1
5 .0
500
25
40
15
D I1 5 6 S
600
420
600
D I1 5 8 S D I1 5 1 0 S
800
560
800
1000
700
1000
U N IT S
V
V
V
A
A
A
2
t
V
μA
pF
O
C / W
O
-5 0 to + 1 2 5
-5 0 to + 1 5 0
C
C
O
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 X 0.5"(13 X 13mm) copper pads
REV.0.1-MAR.18.2010
PAGE . 1
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