DAN2222E datasheet, PDF - EEWORLD Datasheet

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DAN2222E: DescriptionSWITCHING DIODE; File Size294KB，3 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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SWITCHING DIODE

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03A Plastic-Encapsulate Diode

WBFBP-03A

DAN222E

SWITCHING DIODE

(1.6×1.6×0.5)

unit: mm

TOP

DESCRIPTION

Epitaxial planar Silicon diode

FEATURES:

High speed. (trr=1.5ns Typ.)

Suitable for high packing density layout

High reliability.

APPLICATION

Ultra high speed switching

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

MARKING:

1. ANODE

2. ANODE

3.CATHODE

BACK

+ +

Maximum Ratings and Electrical Characteristics, Single Diode @T

=25

℃

Parameter

Peak reverse voltage

DC reverse voltage

Maximum (peak) forward current

Average forward current

Power dissipation

Junction temperature

Storage temperature

Symbol

stg

Limits

300

100

150

-55-150

Unit

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Forward voltage

Diode capacitance

Reverse recovery time

Symbol

(BR)

unless

Test

otherwise

specified)

MIN

0.1

1.2

3.5

MAX

UNIT

conditions

= 100

=70V

=100mA

=6V, f=1MHz

=6V, I

=5mA

µA

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