CJE3139K datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> CJE3139K

CJE3139K: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 660mA Gate-source threshold voltage: 1.1V @ 250uA Drain-source on-resistance: 520mΩ @ 1A, 4.5V Maximum power dissipation ( Ta=25°C): 150mW Type: P channel P channel, -20V, -0.66A, 520mΩ@4.5V; CategoryDiscrete semiconductor MOS (field effect tube); File Size722KB，5 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet Parametric View All

CJE3139K Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 660mA Gate-source threshold voltage: 1.1V @ 250uA Drain-source on-resistance: 520mΩ @ 1A, 4.5V Maximum power dissipation ( Ta=25°C): 150mW Type: P channel P channel, -20V, -0.66A, 520mΩ@4.5V

CJE3139K Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	20V
Continuous drain current (Id) at 25°C	660mA
Gate-source threshold voltage	1.1V @ 250uA
Drain-source on-resistance	520mΩ @ 1A,4.5V
Maximum power dissipation (Ta=25°C)	150mW
type	P channel

CJE3139K Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate MOSFETS

CJE3139K

(BR)DSS

-20V

P-Channel MOSFET

DS(on)

MAX

520 mΩ@-4.5V

700mΩ@-2.5V

950 mΩ(TYP)@-1.8V

-0.66A

SOT-523

1. GATE

2. SOURCE

3. DRAIN

FEATURE

Lead Free Product is Acquired

Surface Mount Package

P-Channel Switch with Low R

(on)

Operated at Low Logic Level Gate Drive

MARKING

APPLICATION

Load/Power Switching

Interfacing, Logic Switching

Battery Management for Ultra Small

Portable Electronics

Equivalent Circuit

Maximum ratings (T

=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Typical

Gate-Source Voltage

Continuous Drain Current (note 1)

Pulsed Drain Current

=10μs)

Power Dissipation (note 1)

Thermal Resistance from Junction to Ambient (note 1)

Junction Temperature

Storage Temperature

Lead Temperature for Soldering Purposes(1/8” from case for 10 s)

Symbol

θJA

STG

Value

-20

±12

-0.66

-1.2

150

833

150

-55~+150

260

Unit

℃/W

℃

www.cj-elec.com

A,Sep,2015

Recommended Resources

Humidity detection circuit schematic diagram

20W 40-500kHz power amplifier 01

Congratulations on getting rich prize box circuit

Wanbao YBR4-6, YBR4-6A hot and cold water dispenser circuit diagram one

Cascade down counter

35V, 2A slow start regulated power supply

Four Ways to Develop Zynq.docx: ...; 至芯科技FPGA大牛 FPGA/CPLD

Code statistics of the most popular programming languages on GitHub: ...; dcexpert MicroPython Open Source section

This is a good comprehensive DC information that I have personally read: DC Comprehensive Information...; 阳光1224 EE_FPGA Learning Park

[Allwinner V853 heterogeneous AI intelligent vision development board evaluation] Cross-compilation environment settings and applications: After setting the system environment variables, you only need to enter arm-openwrt-linux-gcc in the Linux terminal to call the cross compiler. There are 3 ways to set the system environment variables:...; dql2016 Domestic Chip Exchange

LM2776 output voltage is abnormal: I use LM2776 to generate -5V voltage. The problem now is that after power on, the output voltage of the place where -5V should be output is 0.67V; but after touching the -5 output pin with an oscillos...; 风陵渡12138 Power technology

Comment to win a 50-yuan Jingdong card! Watch the video to learn how to use a mixed signal oscilloscope to explore bus and protocol analysis: The excellent design of the MSO6B series is oriented towards higher-speed embedded designs, meeting users' needs for mixed-signal design debugging and the ever-increasing serial bus speed. Provide cut...; EEWORLD社区 Embedded System

Popular Components